Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles : principles of operation, fabrication, measurements, and analysis
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.
Main Author: | Nayfeh, Osama Munir, 1980- |
---|---|
Other Authors: | Dimitri A. Antoniadis. |
Format: | Thesis |
Language: | eng |
Published: |
Massachusetts Institute of Technology
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/47785 |
Similar Items
-
Nonvolatile ferroelectric domain wall memory integrated on silicon
by: Haoying Sun, et al.
Published: (2022-07-01) -
Challenges and Applications of Emerging Nonvolatile Memory Devices
by: Writam Banerjee
Published: (2020-06-01) -
Ionization-induced optical heterogeneity and ion-like direct emission in 1-nm silicon nanoparticle grains: Prospect for fast optical modulation
by: Kevin Mantey, et al.
Published: (2022-12-01) -
Towards nonvolatile memory devices based on ferroelectric polymers
by: Naoto Tsutsumi, et al.
Published: (2012-03-01) -
Sericin for resistance switching device with multilevel nonvolatile memory
by: Wang, Hong, et al.
Published: (2014)