Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

We demonstrate anisotropic etching of single-layer graphene by thermally activated nickel nanoparticles. Using this technique, we obtain sub-10-nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavio...

詳細記述

書誌詳細
主要な著者: Campos, Leonardo, Manfrinato, Vitor Riseti, Sanchez-Yamagishi, Javier D., Kong, Jing, Jarillo-Herrero, Pablo
その他の著者: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
フォーマット: 論文
言語:en_US
出版事項: American Chemical Society 2010
オンライン・アクセス:http://hdl.handle.net/1721.1/50791
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0001-9703-6525
https://orcid.org/0000-0002-9129-4731
https://orcid.org/0000-0001-8217-8213
その他の書誌記述
要約:We demonstrate anisotropic etching of single-layer graphene by thermally activated nickel nanoparticles. Using this technique, we obtain sub-10-nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavior, whereby etched cuts do not intersect, resulting in continuously connected geometries. Raman spectroscopy and electronic measurements show that the quality of the graphene is resilient under the etching conditions, indicating that this method may serve as a powerful technique to produce graphene nanocircuits with well-defined crystallographic edges.