Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

We demonstrate anisotropic etching of single-layer graphene by thermally activated nickel nanoparticles. Using this technique, we obtain sub-10-nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavio...

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Chi tiết về thư mục
Những tác giả chính: Campos, Leonardo, Manfrinato, Vitor Riseti, Sanchez-Yamagishi, Javier D., Kong, Jing, Jarillo-Herrero, Pablo
Tác giả khác: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Định dạng: Bài viết
Ngôn ngữ:en_US
Được phát hành: American Chemical Society 2010
Truy cập trực tuyến:http://hdl.handle.net/1721.1/50791
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0001-9703-6525
https://orcid.org/0000-0002-9129-4731
https://orcid.org/0000-0001-8217-8213
Miêu tả
Tóm tắt:We demonstrate anisotropic etching of single-layer graphene by thermally activated nickel nanoparticles. Using this technique, we obtain sub-10-nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavior, whereby etched cuts do not intersect, resulting in continuously connected geometries. Raman spectroscopy and electronic measurements show that the quality of the graphene is resilient under the etching conditions, indicating that this method may serve as a powerful technique to produce graphene nanocircuits with well-defined crystallographic edges.