Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes
We performed Raman spectroscopy experiments on undoped and boron-doped double walled carbon nanotubes (DWNTs) that exhibit the “coalescence inducing mode” as these DWNTs are heat treated to temperatures between 1200 °C and 2000 °C. The fact that boron doping promotes DWNT coalescence at lower temp...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Physical Society
2010
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| Online Access: | http://hdl.handle.net/1721.1/51031 https://orcid.org/0000-0001-8492-2261 |
| _version_ | 1811077692694462464 |
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| author | Villalpando Paez, Federico Son, H. Chou, S. G. Samsonidze, Ge. G. Kim, Y. A. Hayashi, T. Endo, M. Terrones, M. Dresselhaus, Mildred |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Villalpando Paez, Federico Son, H. Chou, S. G. Samsonidze, Ge. G. Kim, Y. A. Hayashi, T. Endo, M. Terrones, M. Dresselhaus, Mildred |
| author_sort | Villalpando Paez, Federico |
| collection | MIT |
| description | We performed Raman spectroscopy experiments on undoped and boron-doped double walled carbon nanotubes (DWNTs) that exhibit the “coalescence inducing mode” as these DWNTs are heat treated to temperatures between 1200 °C and 2000 °C. The fact that boron doping promotes DWNT coalescence at lower temperatures allowed us to study in greater detail the behavior of first- and second-order Raman modes as a function of temperature with regard to the coalescence process. Furthermore, by using various excitation laser energies we probed DWNTs with different metallic (M) and semiconducting (S) inner and outer tubes. We find that regardless of their M and S configurations, the smaller diameter nanotubes disappear at a faster rate than their larger diameter counterparts as the heat treatment temperature is increased. We also observe that the frequency of the G band is mostly determined by the diameter of the semiconducting layer of those DWNTs that are in resonance with the laser excitation energy. Finally, we explain the contributions to the G′ band from the inner and outer layers of a DWNT. |
| first_indexed | 2024-09-23T10:47:03Z |
| format | Article |
| id | mit-1721.1/51031 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:47:03Z |
| publishDate | 2010 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/510312022-09-30T22:59:21Z Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes Villalpando Paez, Federico Son, H. Chou, S. G. Samsonidze, Ge. G. Kim, Y. A. Hayashi, T. Endo, M. Terrones, M. Dresselhaus, Mildred Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Physics Dresselhaus, Mildred Villalpando Paez, Federico Son, H. Samsonidze, Ge. G. Dresselhaus, Mildred We performed Raman spectroscopy experiments on undoped and boron-doped double walled carbon nanotubes (DWNTs) that exhibit the “coalescence inducing mode” as these DWNTs are heat treated to temperatures between 1200 °C and 2000 °C. The fact that boron doping promotes DWNT coalescence at lower temperatures allowed us to study in greater detail the behavior of first- and second-order Raman modes as a function of temperature with regard to the coalescence process. Furthermore, by using various excitation laser energies we probed DWNTs with different metallic (M) and semiconducting (S) inner and outer tubes. We find that regardless of their M and S configurations, the smaller diameter nanotubes disappear at a faster rate than their larger diameter counterparts as the heat treatment temperature is increased. We also observe that the frequency of the G band is mostly determined by the diameter of the semiconducting layer of those DWNTs that are in resonance with the laser excitation energy. Finally, we explain the contributions to the G′ band from the inner and outer layers of a DWNT. NSF/DMR Ministry of Education, Culture, Sports, Science and Technology of Japan CLUSTER project Fondo Mixto de Puebla Inter American Collaboration CONACYT Mexico 2010-01-29T18:11:40Z 2010-01-29T18:11:40Z 2009-07 2009-05 Article http://purl.org/eprint/type/JournalArticle 1550-235X 1098-0121 http://hdl.handle.net/1721.1/51031 Villalpando-Paez, F. et al. “Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes.” Physical Review B 80.3 (2009): 035419. (C) 2010 The American Physical Society. https://orcid.org/0000-0001-8492-2261 en_US http://dx.doi.org/10.1103/PhysRevB.80.035419 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS |
| spellingShingle | Villalpando Paez, Federico Son, H. Chou, S. G. Samsonidze, Ge. G. Kim, Y. A. Hayashi, T. Endo, M. Terrones, M. Dresselhaus, Mildred Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes |
| title | Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes |
| title_full | Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes |
| title_fullStr | Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes |
| title_full_unstemmed | Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes |
| title_short | Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes |
| title_sort | raman spectroscopy study of heat treated and boron doped double wall carbon nanotubes |
| url | http://hdl.handle.net/1721.1/51031 https://orcid.org/0000-0001-8492-2261 |
| work_keys_str_mv | AT villalpandopaezfederico ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT sonh ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT chousg ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT samsonidzegeg ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT kimya ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT hayashit ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT endom ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT terronesm ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes AT dresselhausmildred ramanspectroscopystudyofheattreatedandborondopeddoublewallcarbonnanotubes |