Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

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The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison...

书目详细资料
Main Authors:	Guilbert, H., Ren, Z. F., Lan, Y. C., Wang, D. Z., Lee, H., Yang, J., Joshi, G., Wang, X. W., Vashaee, D., Chen, Gang, Dresselhaus, Mildred, Pillitteri, A., Zhu, G. H.
其他作者:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
格式:	文件
语言:	en_US
出版:	American Physical Society 2010
在线阅读:	http://hdl.handle.net/1721.1/51346 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-3968-8530

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