Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter
The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52603 |
| _version_ | 1826197005197639680 |
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| author | Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. |
| author_sort | Gomez, Leonardo |
| collection | MIT |
| description | The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were fabricated with a Si thickness of ~8 nm and NW widths in the range of 50 nm down to 8 nm. The GAA strained-Si MOSFETs show excellent subthreshold swing and cutoff behavior, and approximately two times current drive and intrinsic transconductance enhancement compared to similar unstrained Si devices. |
| first_indexed | 2024-09-23T10:40:57Z |
| format | Article |
| id | mit-1721.1/52603 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:40:57Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/526032022-09-27T14:13:50Z Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hoyt, Judy L. Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. uniaxial tensile strained Si nanowire (NW) n-MOSFET Gate all around (GAA) The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were fabricated with a Si thickness of ~8 nm and NW widths in the range of 50 nm down to 8 nm. The GAA strained-Si MOSFETs show excellent subthreshold swing and cutoff behavior, and approximately two times current drive and intrinsic transconductance enhancement compared to similar unstrained Si devices. Focus Center Research Program. Center on Materials, Structures, and Devices 2010-03-15T20:38:25Z 2010-03-15T20:38:25Z 2009-03 2008-12 Article http://purl.org/eprint/type/JournalArticle 0741-3106 http://hdl.handle.net/1721.1/52603 Hashemi, P., L. Gomez, and J.L. Hoyt. “Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter.” Electron Device Letters, IEEE 30.4 (2009): 401-403. © 2009 IEEE en_US http://dx.doi.org/10.1109/LED.2009.2013877 IEEE Electron Device Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | uniaxial tensile strained Si nanowire (NW) n-MOSFET Gate all around (GAA) Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter |
| title | Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter |
| title_full | Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter |
| title_fullStr | Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter |
| title_full_unstemmed | Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter |
| title_short | Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter |
| title_sort | gate all around n mosfets with uniaxial tensile strain induced performance enhancement scalable to sub 10 nm nanowire diameter |
| topic | uniaxial tensile strained Si nanowire (NW) n-MOSFET Gate all around (GAA) |
| url | http://hdl.handle.net/1721.1/52603 |
| work_keys_str_mv | AT gomezleonardo gateallaroundnmosfetswithuniaxialtensilestraininducedperformanceenhancementscalabletosub10nmnanowirediameter AT hashemipouya gateallaroundnmosfetswithuniaxialtensilestraininducedperformanceenhancementscalabletosub10nmnanowirediameter AT hoytjudyl gateallaroundnmosfetswithuniaxialtensilestraininducedperformanceenhancementscalabletosub10nmnanowirediameter |