Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter

Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter

The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body...

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Bibliographic Details
Main Authors: Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
uniaxial tensile
strained Si
nanowire (NW)
n-MOSFET
Gate all around (GAA)
Online Access:http://hdl.handle.net/1721.1/52603

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