Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor
SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, l...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Society of Photo-optical Instrumentation Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52683 https://orcid.org/0000-0003-3001-9223 |
| _version_ | 1826208726807216128 |
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| author | Sood, Ashok K. Richwine, Robert A. Puri, Yash R. DiLello, Nicole Ann Hoyt, Judy L. Akinwande, Tayo I. Horn, Stuart Balcerak, Raymond S. Venkatasubramanian, Rama Bulman, Gary D'Souza, Arvind I. Baramhall, Thomas G. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Sood, Ashok K. Richwine, Robert A. Puri, Yash R. DiLello, Nicole Ann Hoyt, Judy L. Akinwande, Tayo I. Horn, Stuart Balcerak, Raymond S. Venkatasubramanian, Rama Bulman, Gary D'Souza, Arvind I. Baramhall, Thomas G. |
| author_sort | Sood, Ashok K. |
| collection | MIT |
| description | SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond. |
| first_indexed | 2024-09-23T14:10:33Z |
| format | Article |
| id | mit-1721.1/52683 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:10:33Z |
| publishDate | 2010 |
| publisher | Society of Photo-optical Instrumentation Engineers |
| record_format | dspace |
| spelling | mit-1721.1/526832022-10-01T19:38:24Z Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor Sood, Ashok K. Richwine, Robert A. Puri, Yash R. DiLello, Nicole Ann Hoyt, Judy L. Akinwande, Tayo I. Horn, Stuart Balcerak, Raymond S. Venkatasubramanian, Rama Bulman, Gary D'Souza, Arvind I. Baramhall, Thomas G. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Hoyt, Judy L. DiLello, Nicole Ann Hoyt, Judy L. Akinwande, Tayo I. SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond. 2010-03-17T19:12:46Z 2010-03-17T19:12:46Z 2009-05 2009-04 Article http://purl.org/eprint/type/JournalArticle 0277-786X SPIE CID: 72983D-11 http://hdl.handle.net/1721.1/52683 Sood, Ashok K. et al. “Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor.” Infrared Technology and Applications XXXV. Ed. Bjorn F. Andresen, Gabor F. Fulop, & Paul R. Norton. Orlando, FL, USA: SPIE, 2009. 72983D-11. © 2009 SPIE https://orcid.org/0000-0003-3001-9223 en_US http://dx.doi.org/10.1117/12.820896 Proceedings of SPIE--the International Society for Optical Engineering Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Society of Photo-optical Instrumentation Engineers SPIE |
| spellingShingle | Sood, Ashok K. Richwine, Robert A. Puri, Yash R. DiLello, Nicole Ann Hoyt, Judy L. Akinwande, Tayo I. Horn, Stuart Balcerak, Raymond S. Venkatasubramanian, Rama Bulman, Gary D'Souza, Arvind I. Baramhall, Thomas G. Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor |
| title | Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor |
| title_full | Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor |
| title_fullStr | Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor |
| title_full_unstemmed | Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor |
| title_short | Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor |
| title_sort | development of low dark current sige detector arrays for visible nir imaging sensor |
| url | http://hdl.handle.net/1721.1/52683 https://orcid.org/0000-0003-3001-9223 |
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