High index 193 nm immersion lithography: The beginning or the end of the road
For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithography by developing a set of high index materials. For high index immersion lithography (HIL) to enable 1.70NA imaging, a high index lens element with an absorbance < 0.005/cm, a fluid with an index...
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| Format: | Article |
| Language: | en_US |
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Society of Photo-optical Instrumentation Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52703 |
| _version_ | 1811094600381628416 |
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| author | Zimmerman, Paul A. Rice, Bryan J. Piscani, Emil C. Liberman, Vladimir |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Zimmerman, Paul A. Rice, Bryan J. Piscani, Emil C. Liberman, Vladimir |
| author_sort | Zimmerman, Paul A. |
| collection | MIT |
| description | For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithography by developing a set of high index materials. For high index immersion lithography (HIL) to enable 1.70NA imaging, a high index lens element with an absorbance < 0.005/cm, a fluid with an index of >= 1.80, and a resist with an index >1.9 are needed. This paper reviews the success or failure of various HIL components and presents the top final material prospects and properties in each category. Since this abstract was submitted, the industry has decided to cease any effort in HIL, not because of fundamental showstoppers but because of timing. This choice was made even though the only currently available technology the can enable 32 nm and 22 nm manufacturing is double patterning. This may represent a paradigm shift for the semiconductor industry and lithography. It may very well be that using lithography as the main driver for scaling is now past. Due to economic forces in the industry, opportunity costs will force performance scaling using alternative technology. |
| first_indexed | 2024-09-23T16:02:39Z |
| format | Article |
| id | mit-1721.1/52703 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:02:39Z |
| publishDate | 2010 |
| publisher | Society of Photo-optical Instrumentation Engineers |
| record_format | dspace |
| spelling | mit-1721.1/527032022-10-02T05:53:17Z High index 193 nm immersion lithography: The beginning or the end of the road Zimmerman, Paul A. Rice, Bryan J. Piscani, Emil C. Liberman, Vladimir Lincoln Laboratory Liberman, Vladimir Liberman, Vladimir For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithography by developing a set of high index materials. For high index immersion lithography (HIL) to enable 1.70NA imaging, a high index lens element with an absorbance < 0.005/cm, a fluid with an index of >= 1.80, and a resist with an index >1.9 are needed. This paper reviews the success or failure of various HIL components and presents the top final material prospects and properties in each category. Since this abstract was submitted, the industry has decided to cease any effort in HIL, not because of fundamental showstoppers but because of timing. This choice was made even though the only currently available technology the can enable 32 nm and 22 nm manufacturing is double patterning. This may represent a paradigm shift for the semiconductor industry and lithography. It may very well be that using lithography as the main driver for scaling is now past. Due to economic forces in the industry, opportunity costs will force performance scaling using alternative technology. 2010-03-18T13:43:32Z 2010-03-18T13:43:32Z 2009-03 2009-02 Article http://purl.org/eprint/type/JournalArticle 0277-786X SPIE CID: 727420-11 http://hdl.handle.net/1721.1/52703 Zimmerman, Paul A. et al. “High index 193 nm immersion lithography: the beginning or the end of the road.” Optical Microlithography XXII. Ed. Harry J. Levinson & Mircea V. Dusa. San Jose, CA, USA: SPIE, 2009. 727420-11. © 2009 SPIE en_US http://dx.doi.org/10.1117/12.814381 Proceedings of SPIE--the International Society for Optical Engineering Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Society of Photo-optical Instrumentation Engineers SPIE |
| spellingShingle | Zimmerman, Paul A. Rice, Bryan J. Piscani, Emil C. Liberman, Vladimir High index 193 nm immersion lithography: The beginning or the end of the road |
| title | High index 193 nm immersion lithography: The beginning or the end of the road |
| title_full | High index 193 nm immersion lithography: The beginning or the end of the road |
| title_fullStr | High index 193 nm immersion lithography: The beginning or the end of the road |
| title_full_unstemmed | High index 193 nm immersion lithography: The beginning or the end of the road |
| title_short | High index 193 nm immersion lithography: The beginning or the end of the road |
| title_sort | high index 193 nm immersion lithography the beginning or the end of the road |
| url | http://hdl.handle.net/1721.1/52703 |
| work_keys_str_mv | AT zimmermanpaula highindex193nmimmersionlithographythebeginningortheendoftheroad AT ricebryanj highindex193nmimmersionlithographythebeginningortheendoftheroad AT piscaniemilc highindex193nmimmersionlithographythebeginningortheendoftheroad AT libermanvladimir highindex193nmimmersionlithographythebeginningortheendoftheroad |