Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET

Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.

Bibliographic Details
Main Author: Lee, Jae-kyu, Ph. D. Massachusetts Institute of Technology
Other Authors: Dimitri A. Antoniadis.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2010
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/53289

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