On-wafer seamless integration of GaN and Si (100) electronics
The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/53730 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| Summary: | The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mum). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors. |
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