On-wafer seamless integration of GaN and Si (100) electronics
The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/53730 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| _version_ | 1826202442900963328 |
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| author | Chung, Jinwook Lu, Bin Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chung, Jinwook Lu, Bin Palacios, Tomas |
| author_sort | Chung, Jinwook |
| collection | MIT |
| description | The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mum). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors. |
| first_indexed | 2024-09-23T12:07:32Z |
| format | Article |
| id | mit-1721.1/53730 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:07:32Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/537302022-09-28T00:18:46Z On-wafer seamless integration of GaN and Si (100) electronics Chung, Jinwook Lu, Bin Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Palacios, Tomas Chung, Jinwook Lu, Bin Palacios, Tomas The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mum). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors. Semiconductor Research Corporation Focus Center Research Program Interconnect Focus Center 2010-04-16T20:36:53Z 2010-04-16T20:36:53Z 2009-11 2009-10 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-5191-3 1550-8781 INSPEC Accession Number: 10964147 http://hdl.handle.net/1721.1/53730 Jin Wook Chung, Bin Lu, and T. Palacios. “On-Wafer Seamless Integration of GaN and Si (100) Electronics.” Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE. 2009. 1-4. ©2009 Institute of Electrical and Electronics Engineers. https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 en_US http://dx.doi.org/10.1109/csics.2009.5315780 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Chung, Jinwook Lu, Bin Palacios, Tomas On-wafer seamless integration of GaN and Si (100) electronics |
| title | On-wafer seamless integration of GaN and Si (100) electronics |
| title_full | On-wafer seamless integration of GaN and Si (100) electronics |
| title_fullStr | On-wafer seamless integration of GaN and Si (100) electronics |
| title_full_unstemmed | On-wafer seamless integration of GaN and Si (100) electronics |
| title_short | On-wafer seamless integration of GaN and Si (100) electronics |
| title_sort | on wafer seamless integration of gan and si 100 electronics |
| url | http://hdl.handle.net/1721.1/53730 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| work_keys_str_mv | AT chungjinwook onwaferseamlessintegrationofganandsi100electronics AT lubin onwaferseamlessintegrationofganandsi100electronics AT palaciostomas onwaferseamlessintegrationofganandsi100electronics |