Channel engineering of SOI MOSFETs for RF applications
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compare...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/53745 |
| _version_ | 1811070699631017984 |
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| author | Keast, Craig L. Wyatt, Peter W. Healey, Paul D. Yost, Donna-Ruth W. Gouker, Pascale M. Chen, Chenson K. Kedzierski, Jakub T. Knecht, Jeffrey M. Chen, Chang-Lee |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Keast, Craig L. Wyatt, Peter W. Healey, Paul D. Yost, Donna-Ruth W. Gouker, Pascale M. Chen, Chenson K. Kedzierski, Jakub T. Knecht, Jeffrey M. Chen, Chang-Lee |
| author_sort | Keast, Craig L. |
| collection | MIT |
| description | Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants. |
| first_indexed | 2024-09-23T08:40:10Z |
| format | Article |
| id | mit-1721.1/53745 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:40:10Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/537452022-09-23T13:42:19Z Channel engineering of SOI MOSFETs for RF applications Keast, Craig L. Wyatt, Peter W. Healey, Paul D. Yost, Donna-Ruth W. Gouker, Pascale M. Chen, Chenson K. Kedzierski, Jakub T. Knecht, Jeffrey M. Chen, Chang-Lee Lincoln Laboratory Chen, Chang-Lee Keast, Craig L. Wyatt, Peter W. Healey, Paul D. Yost, Donna-Ruth W. Gouker, Pascale M. Chen, Chenson K. Kedzierski, Jakub T. Knecht, Jeffrey M. Chen, Chang-Lee Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants. Defense Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002) 2010-04-23T15:18:52Z 2010-04-23T15:18:52Z 2009-10 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-4256-0 http://hdl.handle.net/1721.1/53745 Chen, C.L. et al. “Channel engineering of SOI MOSFETs for RF applications.” SOI Conference, 2009 IEEE International. 2009. 1-2. © 2009 IEEE en_US http://dx.doi.org/10.1109/SOI.2009.5318756 2009 IEEE International SOI Conference Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Keast, Craig L. Wyatt, Peter W. Healey, Paul D. Yost, Donna-Ruth W. Gouker, Pascale M. Chen, Chenson K. Kedzierski, Jakub T. Knecht, Jeffrey M. Chen, Chang-Lee Channel engineering of SOI MOSFETs for RF applications |
| title | Channel engineering of SOI MOSFETs for RF applications |
| title_full | Channel engineering of SOI MOSFETs for RF applications |
| title_fullStr | Channel engineering of SOI MOSFETs for RF applications |
| title_full_unstemmed | Channel engineering of SOI MOSFETs for RF applications |
| title_short | Channel engineering of SOI MOSFETs for RF applications |
| title_sort | channel engineering of soi mosfets for rf applications |
| url | http://hdl.handle.net/1721.1/53745 |
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