Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates

Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. Through optimization of device fabrication and material growth processes III-V devices with electrical performance comparable to devices grown on native III-V substrates were grown directly i...

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Bibliographic Details
Main Authors: Fitzgerald, Eugene A., Bulsara, Mayank, Augendre, E., Benaissa, L., Daval, N., Drazek, C., Thompson, R., Clark, D., Smith, D., Choe, M. J., Bergman, J., Ha, W., Urteaga, M., Liu, W. K., Fastenau, J. M., Lubyshev, D., LaRoche, J. R., Kazior, T. E.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
Monolithic integrated circuits
Silicon
Indium Phosphide
Heterojunction bipolar transistors
CMOS integrated circuits
Online Access:http://hdl.handle.net/1721.1/54683
https://orcid.org/0000-0002-1891-1959

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