Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices

An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanc...

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Bibliographic Details
Main Authors: Wang, Han, Napoli, Ettore, Udrea, Florin
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
superjunction (SJ)
semiconductor device modeling
power semiconductor devices
charge imbalance (C.I.)
SJ modeling
Analytical model
Online Access:http://hdl.handle.net/1721.1/54726

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