Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices
An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanc...
Main Authors: | Wang, Han, Napoli, Ettore, Udrea, Florin |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers
2010
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/54726 |
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