Kinetic Phenomena in Thin Film Electronic Materials

Contains reports on ten research projects.

Bibliographic Details
Main Authors:	Kim, Hyoung-June, Palmer, Joyce E., Thompson, Carl V., Smith, Henry I., Jiran, Eva, Atwater, Harry A., Schott, Stephen C., Wong, Chee C., Garrison, Stephen M., Im, James S., Smith, David A., Frost, Harold J., Srolovitz, David J., Maiorino, Cesar D., Privost, Larry, Clevenger, Lawrence A., Tu, King-Ning
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Kinetic Phenomena in Thin Film Electronic Materials Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium Metastable Phase Formation in Lithographically Defined Particles of Semiconductors Zone Melting Recrystallization of Silicon Films Zone Melting Recrystallization of Germanium Films Graphoepitaxy of Si Graphoepitaxy of Ge Graphoepitaxy of Model Materials Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films Modeling of Grain Formation in Thin Films Modeling of Grain Growth in Thin Films Modeling of Beading in Thin Films Grain Growth in Thin Films Grain Growth in Thin Films Lines Electrical Properties of Interconnect Lines with Controlled Microstructures Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts
Online Access:	http://hdl.handle.net/1721.1/56928

Description
Summary:	Contains reports on ten research projects.

Similar Items