Kinetic Phenomena in Thin Film Electronic Materials
Contains reports on ten research projects.
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Technical Report |
| Language: | English |
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Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/56928 |
| _version_ | 1811091011284238336 |
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| author | Kim, Hyoung-June Palmer, Joyce E. Thompson, Carl V. Smith, Henry I. Jiran, Eva Atwater, Harry A. Schott, Stephen C. Wong, Chee C. Garrison, Stephen M. Im, James S. Smith, David A. Frost, Harold J. Srolovitz, David J. Maiorino, Cesar D. Privost, Larry Clevenger, Lawrence A. Tu, King-Ning |
| author_facet | Kim, Hyoung-June Palmer, Joyce E. Thompson, Carl V. Smith, Henry I. Jiran, Eva Atwater, Harry A. Schott, Stephen C. Wong, Chee C. Garrison, Stephen M. Im, James S. Smith, David A. Frost, Harold J. Srolovitz, David J. Maiorino, Cesar D. Privost, Larry Clevenger, Lawrence A. Tu, King-Ning |
| author_sort | Kim, Hyoung-June |
| collection | MIT |
| description | Contains reports on ten research projects. |
| first_indexed | 2024-09-23T14:55:41Z |
| format | Technical Report |
| id | mit-1721.1/56928 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:55:41Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/569282019-04-10T16:26:26Z Kinetic Phenomena in Thin Film Electronic Materials Kim, Hyoung-June Palmer, Joyce E. Thompson, Carl V. Smith, Henry I. Jiran, Eva Atwater, Harry A. Schott, Stephen C. Wong, Chee C. Garrison, Stephen M. Im, James S. Smith, David A. Frost, Harold J. Srolovitz, David J. Maiorino, Cesar D. Privost, Larry Clevenger, Lawrence A. Tu, King-Ning Kinetic Phenomena in Thin Film Electronic Materials Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium Metastable Phase Formation in Lithographically Defined Particles of Semiconductors Zone Melting Recrystallization of Silicon Films Zone Melting Recrystallization of Germanium Films Graphoepitaxy of Si Graphoepitaxy of Ge Graphoepitaxy of Model Materials Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films Modeling of Grain Formation in Thin Films Modeling of Grain Growth in Thin Films Modeling of Beading in Thin Films Grain Growth in Thin Films Grain Growth in Thin Films Lines Electrical Properties of Interconnect Lines with Controlled Microstructures Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts Contains reports on ten research projects. Semiconductor Research Corporation (Grant 83-01-033) National Science Foundation (Grant DMR 81-19285) U.S. Department of Energy (Contract DE-ACO2-82-ER-13019) National Science Foundation (Grant ECS82-05701) International Business Machines, Inc. Dartmouth University Joint Services Electronics Program (Contract DAAG29-83-K-0003) 2010-07-15T21:56:29Z 2010-07-15T21:56:29Z 1985-01 Technical Report RLE_PR_127_02 http://hdl.handle.net/1721.1/56928 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985 Kinetic Phenomena in Thin Film Electronic Materials Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Kinetic Phenomena in Thin Film Electronic Materials Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium Metastable Phase Formation in Lithographically Defined Particles of Semiconductors Zone Melting Recrystallization of Silicon Films Zone Melting Recrystallization of Germanium Films Graphoepitaxy of Si Graphoepitaxy of Ge Graphoepitaxy of Model Materials Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films Modeling of Grain Formation in Thin Films Modeling of Grain Growth in Thin Films Modeling of Beading in Thin Films Grain Growth in Thin Films Grain Growth in Thin Films Lines Electrical Properties of Interconnect Lines with Controlled Microstructures Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts Kim, Hyoung-June Palmer, Joyce E. Thompson, Carl V. Smith, Henry I. Jiran, Eva Atwater, Harry A. Schott, Stephen C. Wong, Chee C. Garrison, Stephen M. Im, James S. Smith, David A. Frost, Harold J. Srolovitz, David J. Maiorino, Cesar D. Privost, Larry Clevenger, Lawrence A. Tu, King-Ning Kinetic Phenomena in Thin Film Electronic Materials |
| title | Kinetic Phenomena in Thin Film Electronic Materials |
| title_full | Kinetic Phenomena in Thin Film Electronic Materials |
| title_fullStr | Kinetic Phenomena in Thin Film Electronic Materials |
| title_full_unstemmed | Kinetic Phenomena in Thin Film Electronic Materials |
| title_short | Kinetic Phenomena in Thin Film Electronic Materials |
| title_sort | kinetic phenomena in thin film electronic materials |
| topic | Kinetic Phenomena in Thin Film Electronic Materials Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium Metastable Phase Formation in Lithographically Defined Particles of Semiconductors Zone Melting Recrystallization of Silicon Films Zone Melting Recrystallization of Germanium Films Graphoepitaxy of Si Graphoepitaxy of Ge Graphoepitaxy of Model Materials Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films Modeling of Grain Formation in Thin Films Modeling of Grain Growth in Thin Films Modeling of Beading in Thin Films Grain Growth in Thin Films Grain Growth in Thin Films Lines Electrical Properties of Interconnect Lines with Controlled Microstructures Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts |
| url | http://hdl.handle.net/1721.1/56928 |
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