Kinetic Phenomena in Thin Film Electronic Materials

Kinetic Phenomena in Thin Film Electronic Materials

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Contains reports on ten research projects.

Bibliographic Details
Main Authors: Kim, Hyoung-June, Palmer, Joyce E., Thompson, Carl V., Smith, Henry I., Jiran, Eva, Atwater, Harry A., Schott, Stephen C., Wong, Chee C., Garrison, Stephen M., Im, James S., Smith, David A., Frost, Harold J., Srolovitz, David J., Maiorino, Cesar D., Privost, Larry, Clevenger, Lawrence A., Tu, King-Ning
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
Kinetic Phenomena in Thin Film Electronic Materials
Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon
Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium
Metastable Phase Formation in Lithographically Defined Particles of Semiconductors
Zone Melting Recrystallization of Silicon Films
Zone Melting Recrystallization of Germanium Films
Graphoepitaxy of Si
Graphoepitaxy of Ge
Graphoepitaxy of Model Materials
Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films
Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films
Modeling of Grain Formation in Thin Films
Modeling of Grain Growth in Thin Films
Modeling of Beading in Thin Films
Grain Growth in Thin Films
Grain Growth in Thin Films Lines
Electrical Properties of Interconnect Lines with Controlled Microstructures
Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts
Online Access:http://hdl.handle.net/1721.1/56928
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