High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Contains an introduction and reports on experiments and device results.
| Main Authors: | , , , |
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| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/57088 |
| _version_ | 1811097663374884864 |
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| author | del Alamo, Jesus A. Bahl, Sandeep R. Azzam, Walid Odoardi, Angela R. |
| author_facet | del Alamo, Jesus A. Bahl, Sandeep R. Azzam, Walid Odoardi, Angela R. |
| author_sort | del Alamo, Jesus A. |
| collection | MIT |
| description | Contains an introduction and reports on experiments and device results. |
| first_indexed | 2024-09-23T17:02:56Z |
| format | Technical Report |
| id | mit-1721.1/57088 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T17:02:56Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/570882019-04-12T23:59:51Z High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications del Alamo, Jesus A. Bahl, Sandeep R. Azzam, Walid Odoardi, Angela R. High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications Experiments Device Results Contains an introduction and reports on experiments and device results. Joint Services Electronics Program Contract DAAL03-89-C-0001 Charles S. Draper Laboratory Contract DL-H-404180 2010-07-16T04:06:48Z 2010-07-16T04:06:48Z 1989-01-01 to 1989-12-31 Technical Report RLE_PR_132_01_01s_07 http://hdl.handle.net/1721.1/57088 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989 Solid State Physics, Electronics and Optics Materials and Fabrication High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications Experiments Device Results del Alamo, Jesus A. Bahl, Sandeep R. Azzam, Walid Odoardi, Angela R. High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| title | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| title_full | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| title_fullStr | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| title_full_unstemmed | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| title_short | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| title_sort | high frequency inaias ingaas metal insulator doped semiconductor field effect transistors midfets for telecommunications |
| topic | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications Experiments Device Results |
| url | http://hdl.handle.net/1721.1/57088 |
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