High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

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Contains an introduction and reports on experiments and device results.

Bibliographic Details
Main Authors: del Alamo, Jesus A., Bahl, Sandeep R., Azzam, Walid, Odoardi, Angela R.
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Experiments
Device Results
Online Access:http://hdl.handle.net/1721.1/57088

Internet

http://hdl.handle.net/1721.1/57088

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