Chemical Beam Epitaxy of Compound Semiconductors

Chemical Beam Epitaxy of Compound Semiconductors

Veure altres versions (4)

Contains reports on three research projects and a list of publications.

Dades bibliogràfiques
Autors principals:	Kolodziejski, Leslie A., Huber, Carmen, Azzam, Ziad J., Coronado, Christopher A., Damask, Jay N., Ho, Easen, Chen, George C., Park, Sang H., Shue, Chung-Hao, Yuksel, Ayca, Donovan, Kelley S., Lee, David S., Odoardi, Angela R.
Format:	Technical Report
Idioma:	English
Publicat:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Matèries:	Chemical Beam Epitaxy of Compound Semiconductors Facility for the Gas Source Epitaxy of Compound Semiconductors Metalorganic Molecular Beam Epitaxy (MOMBE) of ZnSe Photo-Assisted MOMBE of Wide Bandgap II-VI Compound Semiconductors
Accés en línia:	http://hdl.handle.net/1721.1/57186

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