High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

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Contains an introduction and a report on one research project.

Bibliographic Details
Main Authors: del Alamo, Jesús A., Awanol, Yuji, Bahl, Sandeep R., Bennett, Brian B., Leary, Michael H., Moolji, Akbar A., Donovan, Kelley S., Odoardi, Angela R.
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Quantum-channel InAIAs/n⁺ -InGaAs MIDFETs
Online Access:http://hdl.handle.net/1721.1/57201
Description
Summary:Contains an introduction and a report on one research project.

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