Heterostructures for High Performance Devices

Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications.

Bibliographic Details
Main Authors:	Fonstad, Clifton J., Jr., Choi, Woo-Young, Smith, Henry I., Hirayama, Yuzo, Smet, Jurgen H., Ippen, Erich P., Hu, Qing, Martin, Paul S., Haus, Hermann A., Royter, Yakov, Hopps, J. H., Shenoy, Krishna V., Mikkelson, J., Elman, B., Nuytkens, P. R., Grot, A. C., Psaltis, D., Aggarwal, Rajni J., Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Heterostructures for High Performance Devices MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures Growth of High Quality InGaAIAs Multiple Quantum Wells Characterization of High Quality InGaAIAs Multiple Quantum Wells New Three-Terminal Laser Diodes with Dynamic Control of Gain New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy Low Temperature Growth of GaAIAs Laser Diodes Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs High Density GaAs MESFET-based OEIC Neural Systems Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
Online Access:	http://hdl.handle.net/1721.1/57213

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author	Fonstad, Clifton J., Jr. Choi, Woo-Young Smith, Henry I. Hirayama, Yuzo Smet, Jurgen H. Ippen, Erich P. Hu, Qing Martin, Paul S. Haus, Hermann A. Royter, Yakov Hopps, J. H. Shenoy, Krishna V. Mikkelson, J. Elman, B. Nuytkens, P. R. Grot, A. C. Psaltis, D. Aggarwal, Rajni J. Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor
author_facet	Fonstad, Clifton J., Jr. Choi, Woo-Young Smith, Henry I. Hirayama, Yuzo Smet, Jurgen H. Ippen, Erich P. Hu, Qing Martin, Paul S. Haus, Hermann A. Royter, Yakov Hopps, J. H. Shenoy, Krishna V. Mikkelson, J. Elman, B. Nuytkens, P. R. Grot, A. C. Psaltis, D. Aggarwal, Rajni J. Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor
author_sort	Fonstad, Clifton J., Jr.
collection	MIT
description	Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications.
first_indexed	2024-09-23T09:27:47Z
format	Technical Report
id	mit-1721.1/57213
institution	Massachusetts Institute of Technology
language	English
last_indexed	2024-09-23T09:27:47Z
publishDate	2010
publisher	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
record_format	dspace
spelling	mit-1721.1/572132019-04-12T23:49:12Z Heterostructures for High Performance Devices Fonstad, Clifton J., Jr. Choi, Woo-Young Smith, Henry I. Hirayama, Yuzo Smet, Jurgen H. Ippen, Erich P. Hu, Qing Martin, Paul S. Haus, Hermann A. Royter, Yakov Hopps, J. H. Shenoy, Krishna V. Mikkelson, J. Elman, B. Nuytkens, P. R. Grot, A. C. Psaltis, D. Aggarwal, Rajni J. Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor Heterostructures for High Performance Devices MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures Growth of High Quality InGaAIAs Multiple Quantum Wells Characterization of High Quality InGaAIAs Multiple Quantum Wells New Three-Terminal Laser Diodes with Dynamic Control of Gain New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy Low Temperature Growth of GaAIAs Laser Diodes Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs High Density GaAs MESFET-based OEIC Neural Systems Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications. DARPA/NCIPT Joint Services Electronics Program Contract DAAL03-92-C-0001 National Science Foundation Toshiba Corporation Ltd. Charles S. Draper Laboratories Hertz Foundation Fellowship Vitesse Semiconductor GTE Laboratories National Science Foundation Fellowship DARPA/MOSIS Texas Instruments, Inc. U.S. Army Research Office Grant DAAL03-92-G-0251 2010-07-16T05:12:39Z 2010-07-16T05:12:39Z 1992-01-01 to 1992-12-31 Technical Report RLE_PR_135_01_01s_01 http://hdl.handle.net/1721.1/57213 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High Performance Devices Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
spellingShingle	Heterostructures for High Performance Devices MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures Growth of High Quality InGaAIAs Multiple Quantum Wells Characterization of High Quality InGaAIAs Multiple Quantum Wells New Three-Terminal Laser Diodes with Dynamic Control of Gain New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy Low Temperature Growth of GaAIAs Laser Diodes Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs High Density GaAs MESFET-based OEIC Neural Systems Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams Fonstad, Clifton J., Jr. Choi, Woo-Young Smith, Henry I. Hirayama, Yuzo Smet, Jurgen H. Ippen, Erich P. Hu, Qing Martin, Paul S. Haus, Hermann A. Royter, Yakov Hopps, J. H. Shenoy, Krishna V. Mikkelson, J. Elman, B. Nuytkens, P. R. Grot, A. C. Psaltis, D. Aggarwal, Rajni J. Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor Heterostructures for High Performance Devices
title	Heterostructures for High Performance Devices
title_full	Heterostructures for High Performance Devices
title_fullStr	Heterostructures for High Performance Devices
title_full_unstemmed	Heterostructures for High Performance Devices
title_short	Heterostructures for High Performance Devices
title_sort	heterostructures for high performance devices
topic	Heterostructures for High Performance Devices MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures Growth of High Quality InGaAIAs Multiple Quantum Wells Characterization of High Quality InGaAIAs Multiple Quantum Wells New Three-Terminal Laser Diodes with Dynamic Control of Gain New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy Low Temperature Growth of GaAIAs Laser Diodes Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs High Density GaAs MESFET-based OEIC Neural Systems Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
url	http://hdl.handle.net/1721.1/57213
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Heterostructures for High Performance Devices

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