Heterostructures for High Performance Devices

Heterostructures for High Performance Devices

अन्य संस्करण दिखाएं (5)

Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on sixteen research projects and a list of publications.

ग्रंथसूची विवरण
मुख्य लेखकों:	Fonstad, Clifton J., Jr., Choi, Woo-Young, Smith, Henry I., Hirayama, Yuzo, Smet, Jurgen H., Ippen, Erich P., Hu, Qing, Martin, Paul S., Haus, Hermann A., Royter, Yakov, Hopps, J. H., Shenoy, Krishna V., Mikkelson, J., Elman, B., Nuytkens, P. R., Grot, A. C., Psaltis, D., Aggarwal, Rajni J., Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor
स्वरूप:	Technical Report
भाषा:	English
प्रकाशित:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
विषय:	Heterostructures for High Performance Devices MBE-Grown InGaAIAs Laser Diodes for Optical Fiber Communication Applications Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Feasibility Study of 1.55 μm Intersubband Transition in InGaAs/AIAs Quantum-Well Heterostructures Growth of High Quality InGaAIAs Multiple Quantum Wells Characterization of High Quality InGaAIAs Multiple Quantum Wells New Three-Terminal Laser Diodes with Dynamic Control of Gain New Three-Terminal Laser Diodes with Dynamic Control of Refractive Index Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Evaluation of GaAs MESFET VLSI Circuits as Substrates for III-V Heterostructure Epitaxy Low Temperature Growth of GaAIAs Laser Diodes Optical Input Circuitry for High Density, High Speed GaAs MESFET-based OEICs Optical Output Circuitry for High Density, High Speed GaAs MESFET-based OEICs High Density GaAs MESFET-based OEIC Neural Systems Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum-Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum-Well Heterostructures Analysis of the Symmetry Properties of Quantum Well Subband Energy Levels Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
ऑनलाइन पहुंच:	http://hdl.handle.net/1721.1/57213

समान संसाधन

Heterostructures for High Performance Devices
द्वारा: Fonstad, Clifton J., Jr., और अन्य
प्रकाशित: (2010)

Heterostructures for Optical Devices
द्वारा: Singer, Richard, और अन्य
प्रकाशित: (2010)

Heterostructures for High Performance Devices
द्वारा: Fonstad, Clifton G., Jr., और अन्य
प्रकाशित: (2010)

Heterostructures for High Performance Devices
द्वारा: Fonstad, Clifton J., Jr., और अन्य
प्रकाशित: (2010)

InGaAsN/GaAs Quantum-well Laser Diodes
द्वारा: Wang, S.Z., और अन्य
प्रकाशित: (2003)

Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm
द्वारा: Wang, S.Z., और अन्य
प्रकाशित: (2003)

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Heterostructures for High Performance Devices
द्वारा: Fonstad, Clifton J., Jr., और अन्य
प्रकाशित: (2010)

Heterostructures for High-Performance Devices
द्वारा: Fonstad, Clifton J., Jr., और अन्य
प्रकाशित: (2010)

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers
द्वारा: Bangguo Wang, और अन्य
प्रकाशित: (2024-01-01)

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
द्वारा: del Alamo, Jesus A., और अन्य
प्रकाशित: (2010)

Bias-Tunable Quantum Well Infrared Photodetector
द्वारा: Gyana Biswal, और अन्य
प्रकाशित: (2024-03-01)

HEMT Noise Modeling for D Band Low Noise Amplifier Design
द्वारा: Ao Zhang, और अन्य
प्रकाशित: (2024-01-01)

High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode
द्वारा: Nan Wu, और अन्य
प्रकाशित: (2024-01-01)

Compound Semiconductor Materials and Devices
द्वारा: Fonstad, Clifton G., Jr., और अन्य
प्रकाशित: (2010)

Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm
द्वारा: Wang, S.Z., और अन्य
प्रकाशित: (2003)

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
द्वारा: Deyan Dai, और अन्य
प्रकाशित: (2025-01-01)

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
द्वारा: del Alamo, Jesus A., और अन्य
प्रकाशित: (2010)

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Compound Semiconductor Materials and Devices
द्वारा: Fonstad, Clifton J., Jr., और अन्य
प्रकाशित: (2010)

Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes
द्वारा: Zainab M. Alharbi, और अन्य
प्रकाशित: (2025-01-01)

Physics of Hemterostructure Field-Effect Transistors
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Reliability Analysis of the 300W GaInP/GaAs/Ge Solar Cell Array Using PCM
द्वारा: Goo-Hwan Shin, और अन्य
प्रकाशित: (2019-06-01)

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
द्वारा: del Alamo, Jesus A., और अन्य
प्रकाशित: (2010)

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application
द्वारा: Yunfeng Fang, और अन्य
प्रकाशित: (2024-02-01)

Compound Semiconductor Materials and Devices
द्वारा: Fonstad, Clifton J., Jr., और अन्य
प्रकाशित: (2010)

Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode
द्वारा: Haris Naeem Abbasi, और अन्य
प्रकाशित: (2025-02-01)

Phantom Fellowship Program Culminates in BAH Optimization Project
प्रकाशित: (2023)

Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application
द्वारा: Makram A. Fakhri, और अन्य
प्रकाशित: (2024-06-01)

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
द्वारा: del Alamo, Jesús A., और अन्य
प्रकाशित: (2010)

Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum
द्वारा: Marta Gładysiewicz-Kudrawiec, और अन्य
प्रकाशित: (2025-01-01)

Novel Bidirectional ESD Circuit for GaN HEMT
द्वारा: Pengfei Zhang, और अन्य
प्रकाशित: (2025-01-01)

Study of tunneling and oscillation in a GaAs/〖Al〗_(0.3) 〖Ga〗_(0.7) As superlattice: using transfer matrix method
द्वारा: S Shrestha, और अन्य
प्रकाशित: (2021-01-01)

Study of tunneling and oscillation in a GaAs/〖Al〗_(0.3) 〖Ga〗_(0.7) As superlattice: using transfer matrix method
द्वारा: S Shrestha, और अन्य
प्रकाशित: (2021-01-01)

Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
द्वारा: Souad Benykrelef, और अन्य
प्रकाशित: (2023-05-01)

Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)<sub>4</sub>(GaAs)<sub>3</sub>/Be-Doped InAlAs Quantum Wells for THz Applications
द्वारा: Linsheng Liu, और अन्य
प्रकाशित: (2024-04-01)

Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
द्वारा: Sanju Shrestha, और अन्य
प्रकाशित: (2018-11-01)