Heterostructures for High Performance Devices
Contains table of contents for Part I, table of contents for Section 1, an introduction and reports on eighteen research projects.
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| Formaat: | Technical Report |
| Taal: | English |
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Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Online toegang: | http://hdl.handle.net/1721.1/57249 |
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| author | Fonstad, Clifton J., Jr. Choi, Woo-Young Wong, Vincent V. Smith, Henry I. Meehan, Kathy Gavrilovic, Paul Whitney, P. Chen, Jerry C. Haus, Hermann A. Peng, Lung-Han Smet, Jurgen H. Ippen, Erich P. Lenz, Gadi Martin, Paul S. Shenoy, Krishna V. Goodhue, William D. Braun, Eric K. Mikkelson, J. Hansell, G. Harton, A. Wyatt, C. Ahadian, Joseph F. Kolodziejski, Leslie A. Grot, A. C. Psaltis, D. Nuytkens, P. R. Royter, Yakov Aggarwal, Rajni J. Hirayama, Yuzo Jones, R. Victor Ehrenrich, Victor Hu, Qing Prasad, Sheila Hoshino, Isako |
| author_facet | Fonstad, Clifton J., Jr. Choi, Woo-Young Wong, Vincent V. Smith, Henry I. Meehan, Kathy Gavrilovic, Paul Whitney, P. Chen, Jerry C. Haus, Hermann A. Peng, Lung-Han Smet, Jurgen H. Ippen, Erich P. Lenz, Gadi Martin, Paul S. Shenoy, Krishna V. Goodhue, William D. Braun, Eric K. Mikkelson, J. Hansell, G. Harton, A. Wyatt, C. Ahadian, Joseph F. Kolodziejski, Leslie A. Grot, A. C. Psaltis, D. Nuytkens, P. R. Royter, Yakov Aggarwal, Rajni J. Hirayama, Yuzo Jones, R. Victor Ehrenrich, Victor Hu, Qing Prasad, Sheila Hoshino, Isako |
| author_sort | Fonstad, Clifton J., Jr. |
| collection | MIT |
| description | Contains table of contents for Part I, table of contents for Section 1, an introduction and reports on eighteen research projects. |
| first_indexed | 2024-09-23T11:09:35Z |
| format | Technical Report |
| id | mit-1721.1/57249 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:09:35Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/572492019-04-12T23:47:41Z Heterostructures for High Performance Devices Fonstad, Clifton J., Jr. Choi, Woo-Young Wong, Vincent V. Smith, Henry I. Meehan, Kathy Gavrilovic, Paul Whitney, P. Chen, Jerry C. Haus, Hermann A. Peng, Lung-Han Smet, Jurgen H. Ippen, Erich P. Lenz, Gadi Martin, Paul S. Shenoy, Krishna V. Goodhue, William D. Braun, Eric K. Mikkelson, J. Hansell, G. Harton, A. Wyatt, C. Ahadian, Joseph F. Kolodziejski, Leslie A. Grot, A. C. Psaltis, D. Nuytkens, P. R. Royter, Yakov Aggarwal, Rajni J. Hirayama, Yuzo Jones, R. Victor Ehrenrich, Victor Hu, Qing Prasad, Sheila Hoshino, Isako Heterostructures for High Performance Devices Growth Optimization of MBE-Grown InAIAs on InP Fabrication of Ridge Waveguide Distributed Feedback Lasers by X-ray Lithography Numerical Calculation of Coupling Coefficients in Ridge Waveguide Distributed Feedback Lasers Measurement of Excited-state Lifetimes in Narrow Quantum Wells Tunable Semiconductor Lasers Integration of Vertically-emitting, In-plane Cavity Laser Diodes on GaAs VLSI Circuitry Thermal Stability of GaAs MESFET VLSI Circuits Gas Source MBE of InGaAsP Laser Diodes on GaAs Substrates High-Density OEIC Neural Systems Produced by Monolithic Integration of GaAIAs Light Emitting Diodes on GaAs MESFET VLSI Circuits Surface-Normal Optical Input Cells for High-Density, High-Speed GaAs MESFET-based OEICs Surface-Normal Optical Output Cells for High-Density, High-Speed GaAs MESFET-based OEICs Fiber-coupled GaAs MESFET-based OEICs Low-temperature, Selective-area MBE Growth of GaAllInAs Laser Diodes on Semi-insulating GaAs Substrates Low-temperature, Selective-area MBE Growth of GaAllInAs Optical Waveguides on Semi-insulating GaAs Substrates Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Polarization-resolved Infrared Spectra of Very Narrow AIAs/InGaAs/InP Quantum Wells Symmetry Properties of Quantum Well Subband Energy Levels for Intersubband Transitions Symmetry Properties of Quantum Well Subband Selection Rules for Intersubband Transitions Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures High-Frequency/High-Speed Characterization of Heterojunction Bipolar Transistors High-Frequency/High-Speed Analysis of Heterojunction Bipolar Transistors High-Frequency/High-Speed Modeling of Heterojunction Bipolar Transistors High-Frequency/High-Speed Characterization of Heterojunction Laser Diodes High-Frequency/High-Speed Analysis of Heterojunction Laser Diodes High-Frequency/High-Speed Modeling of Heterojunction Laser Diodes High-Frequency/High-Speed Characterization of Heterojunction m-s-m Photodetectors High-Frequency/High-Speed Analysis of Heterojunction m-s-m Photodetectors High-Frequency/High-Speed Modeling of Heterojunction m-s-m Photodetectors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams Contains table of contents for Part I, table of contents for Section 1, an introduction and reports on eighteen research projects. Advanced Research Projects Agency/NCIPT Joint Services Electronics Program Contract DAAL03-92-C-0001 Hertz Foundation Fellowship National Science Foundation Fellowship U.S. Army Research Office Grant DAAL03-92-G-0251 National Science Foundation AT&T Bell Laboratories Fellowship Advanced Research Projects Agency/NCIPT National Science Foundation Grant ECS 90-07745 2010-07-16T19:21:31Z 2010-07-16T19:21:31Z 1993-01-01 to 1993-12-31 Technical Report RLE_PR_136_01_01s_01 http://hdl.handle.net/1721.1/57249 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High Performance Devices Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Heterostructures for High Performance Devices Growth Optimization of MBE-Grown InAIAs on InP Fabrication of Ridge Waveguide Distributed Feedback Lasers by X-ray Lithography Numerical Calculation of Coupling Coefficients in Ridge Waveguide Distributed Feedback Lasers Measurement of Excited-state Lifetimes in Narrow Quantum Wells Tunable Semiconductor Lasers Integration of Vertically-emitting, In-plane Cavity Laser Diodes on GaAs VLSI Circuitry Thermal Stability of GaAs MESFET VLSI Circuits Gas Source MBE of InGaAsP Laser Diodes on GaAs Substrates High-Density OEIC Neural Systems Produced by Monolithic Integration of GaAIAs Light Emitting Diodes on GaAs MESFET VLSI Circuits Surface-Normal Optical Input Cells for High-Density, High-Speed GaAs MESFET-based OEICs Surface-Normal Optical Output Cells for High-Density, High-Speed GaAs MESFET-based OEICs Fiber-coupled GaAs MESFET-based OEICs Low-temperature, Selective-area MBE Growth of GaAllInAs Laser Diodes on Semi-insulating GaAs Substrates Low-temperature, Selective-area MBE Growth of GaAllInAs Optical Waveguides on Semi-insulating GaAs Substrates Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Polarization-resolved Infrared Spectra of Very Narrow AIAs/InGaAs/InP Quantum Wells Symmetry Properties of Quantum Well Subband Energy Levels for Intersubband Transitions Symmetry Properties of Quantum Well Subband Selection Rules for Intersubband Transitions Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures High-Frequency/High-Speed Characterization of Heterojunction Bipolar Transistors High-Frequency/High-Speed Analysis of Heterojunction Bipolar Transistors High-Frequency/High-Speed Modeling of Heterojunction Bipolar Transistors High-Frequency/High-Speed Characterization of Heterojunction Laser Diodes High-Frequency/High-Speed Analysis of Heterojunction Laser Diodes High-Frequency/High-Speed Modeling of Heterojunction Laser Diodes High-Frequency/High-Speed Characterization of Heterojunction m-s-m Photodetectors High-Frequency/High-Speed Analysis of Heterojunction m-s-m Photodetectors High-Frequency/High-Speed Modeling of Heterojunction m-s-m Photodetectors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams Fonstad, Clifton J., Jr. Choi, Woo-Young Wong, Vincent V. Smith, Henry I. Meehan, Kathy Gavrilovic, Paul Whitney, P. Chen, Jerry C. Haus, Hermann A. Peng, Lung-Han Smet, Jurgen H. Ippen, Erich P. Lenz, Gadi Martin, Paul S. Shenoy, Krishna V. Goodhue, William D. Braun, Eric K. Mikkelson, J. Hansell, G. Harton, A. Wyatt, C. Ahadian, Joseph F. Kolodziejski, Leslie A. Grot, A. C. Psaltis, D. Nuytkens, P. R. Royter, Yakov Aggarwal, Rajni J. Hirayama, Yuzo Jones, R. Victor Ehrenrich, Victor Hu, Qing Prasad, Sheila Hoshino, Isako Heterostructures for High Performance Devices |
| title | Heterostructures for High Performance Devices |
| title_full | Heterostructures for High Performance Devices |
| title_fullStr | Heterostructures for High Performance Devices |
| title_full_unstemmed | Heterostructures for High Performance Devices |
| title_short | Heterostructures for High Performance Devices |
| title_sort | heterostructures for high performance devices |
| topic | Heterostructures for High Performance Devices Growth Optimization of MBE-Grown InAIAs on InP Fabrication of Ridge Waveguide Distributed Feedback Lasers by X-ray Lithography Numerical Calculation of Coupling Coefficients in Ridge Waveguide Distributed Feedback Lasers Measurement of Excited-state Lifetimes in Narrow Quantum Wells Tunable Semiconductor Lasers Integration of Vertically-emitting, In-plane Cavity Laser Diodes on GaAs VLSI Circuitry Thermal Stability of GaAs MESFET VLSI Circuits Gas Source MBE of InGaAsP Laser Diodes on GaAs Substrates High-Density OEIC Neural Systems Produced by Monolithic Integration of GaAIAs Light Emitting Diodes on GaAs MESFET VLSI Circuits Surface-Normal Optical Input Cells for High-Density, High-Speed GaAs MESFET-based OEICs Surface-Normal Optical Output Cells for High-Density, High-Speed GaAs MESFET-based OEICs Fiber-coupled GaAs MESFET-based OEICs Low-temperature, Selective-area MBE Growth of GaAllInAs Laser Diodes on Semi-insulating GaAs Substrates Low-temperature, Selective-area MBE Growth of GaAllInAs Optical Waveguides on Semi-insulating GaAs Substrates Applications of Resonant Tunneling Diodes in GaAs MESFET VLSI Polarization-resolved Infrared Spectra of Very Narrow AIAs/InGaAs/InP Quantum Wells Symmetry Properties of Quantum Well Subband Energy Levels for Intersubband Transitions Symmetry Properties of Quantum Well Subband Selection Rules for Intersubband Transitions Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures High-Frequency/High-Speed Characterization of Heterojunction Bipolar Transistors High-Frequency/High-Speed Analysis of Heterojunction Bipolar Transistors High-Frequency/High-Speed Modeling of Heterojunction Bipolar Transistors High-Frequency/High-Speed Characterization of Heterojunction Laser Diodes High-Frequency/High-Speed Analysis of Heterojunction Laser Diodes High-Frequency/High-Speed Modeling of Heterojunction Laser Diodes High-Frequency/High-Speed Characterization of Heterojunction m-s-m Photodetectors High-Frequency/High-Speed Analysis of Heterojunction m-s-m Photodetectors High-Frequency/High-Speed Modeling of Heterojunction m-s-m Photodetectors Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams |
| url | http://hdl.handle.net/1721.1/57249 |
| work_keys_str_mv | AT fonstadcliftonjjr heterostructuresforhighperformancedevices AT choiwooyoung heterostructuresforhighperformancedevices AT wongvincentv heterostructuresforhighperformancedevices AT smithhenryi heterostructuresforhighperformancedevices AT meehankathy heterostructuresforhighperformancedevices AT gavrilovicpaul heterostructuresforhighperformancedevices AT whitneyp heterostructuresforhighperformancedevices AT chenjerryc heterostructuresforhighperformancedevices AT haushermanna heterostructuresforhighperformancedevices AT penglunghan heterostructuresforhighperformancedevices AT smetjurgenh heterostructuresforhighperformancedevices AT ippenerichp heterostructuresforhighperformancedevices AT lenzgadi heterostructuresforhighperformancedevices AT martinpauls heterostructuresforhighperformancedevices AT shenoykrishnav heterostructuresforhighperformancedevices AT goodhuewilliamd heterostructuresforhighperformancedevices AT braunerick heterostructuresforhighperformancedevices AT mikkelsonj heterostructuresforhighperformancedevices AT hansellg heterostructuresforhighperformancedevices AT hartona heterostructuresforhighperformancedevices AT wyattc heterostructuresforhighperformancedevices AT ahadianjosephf heterostructuresforhighperformancedevices AT kolodziejskilesliea heterostructuresforhighperformancedevices AT grotac heterostructuresforhighperformancedevices AT psaltisd heterostructuresforhighperformancedevices AT nuytkenspr heterostructuresforhighperformancedevices AT royteryakov heterostructuresforhighperformancedevices AT aggarwalrajnij heterostructuresforhighperformancedevices AT hirayamayuzo heterostructuresforhighperformancedevices AT jonesrvictor heterostructuresforhighperformancedevices AT ehrenrichvictor heterostructuresforhighperformancedevices AT huqing heterostructuresforhighperformancedevices AT prasadsheila heterostructuresforhighperformancedevices AT hoshinoisako heterostructuresforhighperformancedevices |