Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Contains an introduction, reports on two research projects and a list of publications and conference papers.
| Main Authors: | , , , , |
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| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/57250 |
| _version_ | 1826210748493201408 |
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| author | del Alamo, Jesús A. Bahl, Sandeep R. Moolji, Akbar A. Cudjoe-Flanders, Charmaine A. Odoardi, Angela R. |
| author_facet | del Alamo, Jesús A. Bahl, Sandeep R. Moolji, Akbar A. Cudjoe-Flanders, Charmaine A. Odoardi, Angela R. |
| author_sort | del Alamo, Jesús A. |
| collection | MIT |
| description | Contains an introduction, reports on two research projects and a list of publications and conference papers. |
| first_indexed | 2024-09-23T14:55:04Z |
| format | Technical Report |
| id | mit-1721.1/57250 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:55:04Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/572502019-04-12T23:58:33Z Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors del Alamo, Jesús A. Bahl, Sandeep R. Moolji, Akbar A. Cudjoe-Flanders, Charmaine A. Odoardi, Angela R. Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Physics of Breakdown in InAIAs/InGaAs MODFETs Impact Ionization in InAIAs/InGaAs HFETs Contains an introduction, reports on two research projects and a list of publications and conference papers. Charles S. Draper Laboratories Contract DL-H-441694 Joint Services Electronics Program Contract DAAL03-92-C-0001 Texas Instruments Agreement dated 08/14/91 2010-07-16T19:21:43Z 2010-07-16T19:21:43Z 1993-01-01 to 1993-12-31 Technical Report RLE_PR_136_01_01s_02 http://hdl.handle.net/1721.1/57250 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993 Solid State Physics, Electronics and Optics Materials and Fabrication Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Physics of Breakdown in InAIAs/InGaAs MODFETs Impact Ionization in InAIAs/InGaAs HFETs del Alamo, Jesús A. Bahl, Sandeep R. Moolji, Akbar A. Cudjoe-Flanders, Charmaine A. Odoardi, Angela R. Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_full | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_fullStr | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_full_unstemmed | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_short | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_sort | physics of inaias ingaas heterostructure field effect transistors |
| topic | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Physics of Breakdown in InAIAs/InGaAs MODFETs Impact Ionization in InAIAs/InGaAs HFETs |
| url | http://hdl.handle.net/1721.1/57250 |
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