Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Contains an introduction, reports on two research projects and a list of publications and conference papers.

Bibliographic Details
Main Authors:	del Alamo, Jesús A., Bahl, Sandeep R., Moolji, Akbar A., Cudjoe-Flanders, Charmaine A., Odoardi, Angela R.
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Physics of Breakdown in InAIAs/InGaAs MODFETs Impact Ionization in InAIAs/InGaAs HFETs
Online Access:	http://hdl.handle.net/1721.1/57250