Chemical Reaction Dynamics at Surfaces
Contains reports on four research projects.
| Main Authors: | , , , , , |
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| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/57276 |
| _version_ | 1811081645333151744 |
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| author | Ceyer, Sylvia T. Pullman, David P. Tsekouras, Athanassios A. Zhang, Zhe Gosalvez, David B. Yang, Julius J. |
| author_facet | Ceyer, Sylvia T. Pullman, David P. Tsekouras, Athanassios A. Zhang, Zhe Gosalvez, David B. Yang, Julius J. |
| author_sort | Ceyer, Sylvia T. |
| collection | MIT |
| description | Contains reports on four research projects. |
| first_indexed | 2024-09-23T11:50:08Z |
| format | Technical Report |
| id | mit-1721.1/57276 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:50:08Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/572762019-04-12T23:58:36Z Chemical Reaction Dynamics at Surfaces Ceyer, Sylvia T. Pullman, David P. Tsekouras, Athanassios A. Zhang, Zhe Gosalvez, David B. Yang, Julius J. Chemical Reaction Dynamics at Surfaces New Mechanism for Dissociative Chemisorption on Si: Atom Abstraction Model for Atom Abstraction by Surfaces Atom Abstraction Relationship of Atom Abstraction to Thin Film Growth Etching of Si(100) by Energetic Fluorine Contains reports on four research projects. Joint Services Electronics Program Contract DAAL03-92-C-0001 2010-07-16T19:28:09Z 2010-07-16T19:28:09Z 1993-01-01 to 1993-12-31 Technical Report RLE_PR_136_01_04s_03 http://hdl.handle.net/1721.1/57276 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993 Solid State Physics, Electronics and Optics Surfaces and Interfaces Chemical Reaction Dynamics at Surfaces Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Chemical Reaction Dynamics at Surfaces New Mechanism for Dissociative Chemisorption on Si: Atom Abstraction Model for Atom Abstraction by Surfaces Atom Abstraction Relationship of Atom Abstraction to Thin Film Growth Etching of Si(100) by Energetic Fluorine Ceyer, Sylvia T. Pullman, David P. Tsekouras, Athanassios A. Zhang, Zhe Gosalvez, David B. Yang, Julius J. Chemical Reaction Dynamics at Surfaces |
| title | Chemical Reaction Dynamics at Surfaces |
| title_full | Chemical Reaction Dynamics at Surfaces |
| title_fullStr | Chemical Reaction Dynamics at Surfaces |
| title_full_unstemmed | Chemical Reaction Dynamics at Surfaces |
| title_short | Chemical Reaction Dynamics at Surfaces |
| title_sort | chemical reaction dynamics at surfaces |
| topic | Chemical Reaction Dynamics at Surfaces New Mechanism for Dissociative Chemisorption on Si: Atom Abstraction Model for Atom Abstraction by Surfaces Atom Abstraction Relationship of Atom Abstraction to Thin Film Growth Etching of Si(100) by Energetic Fluorine |
| url | http://hdl.handle.net/1721.1/57276 |
| work_keys_str_mv | AT ceyersylviat chemicalreactiondynamicsatsurfaces AT pullmandavidp chemicalreactiondynamicsatsurfaces AT tsekourasathanassiosa chemicalreactiondynamicsatsurfaces AT zhangzhe chemicalreactiondynamicsatsurfaces AT gosalvezdavidb chemicalreactiondynamicsatsurfaces AT yangjuliusj chemicalreactiondynamicsatsurfaces |