Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

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Contains an introduction, a report on one research project and a list of publications and conference papers.

Bibliographic Details
Main Authors:	del Alamo, Jesús A., Somerville, Mark H., Ernst, Alexander N., Zeidenberg, Lisa B.
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Model for Tunneling-Limited Breakdown in High-Power HEMTs
Online Access:	http://hdl.handle.net/1721.1/57368

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