Compound Semiconductor Materials and Devices
Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications.
Main Authors: | , , , , , , , , , , , , , , , , , , , , , , |
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Format: | Technical Report |
Language: | English |
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Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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Online Access: | http://hdl.handle.net/1721.1/57412 |
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author | Fonstad, Clifton G., Jr. Ahadian, Joseph F. Royter, Yakov Patterson, Steven G. Viadyananthan, Praveen T. Postigo, P. Aitor Petrich, Gale S. Kolodziejski, Leslie A. Mikkelson, James M. Goodhue, William D. Braddock, David Mull, Daniel E. Choy, Henry K. Ram, Rajeev J. Hoshino, Isako Prasad, Sheila Wang, Haifeng Hemenway, Roe B., Jr. Deming, Robert Knoedl, Thomas London, Joanna Crankshaw, Donald S. Pan, Janet L. |
author_facet | Fonstad, Clifton G., Jr. Ahadian, Joseph F. Royter, Yakov Patterson, Steven G. Viadyananthan, Praveen T. Postigo, P. Aitor Petrich, Gale S. Kolodziejski, Leslie A. Mikkelson, James M. Goodhue, William D. Braddock, David Mull, Daniel E. Choy, Henry K. Ram, Rajeev J. Hoshino, Isako Prasad, Sheila Wang, Haifeng Hemenway, Roe B., Jr. Deming, Robert Knoedl, Thomas London, Joanna Crankshaw, Donald S. Pan, Janet L. |
author_sort | Fonstad, Clifton G., Jr. |
collection | MIT |
description | Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications. |
first_indexed | 2024-09-23T11:09:53Z |
format | Technical Report |
id | mit-1721.1/57412 |
institution | Massachusetts Institute of Technology |
language | English |
last_indexed | 2024-09-23T11:09:53Z |
publishDate | 2010 |
publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
record_format | dspace |
spelling | mit-1721.1/574122019-04-12T23:58:49Z Compound Semiconductor Materials and Devices Fonstad, Clifton G., Jr. Ahadian, Joseph F. Royter, Yakov Patterson, Steven G. Viadyananthan, Praveen T. Postigo, P. Aitor Petrich, Gale S. Kolodziejski, Leslie A. Mikkelson, James M. Goodhue, William D. Braddock, David Mull, Daniel E. Choy, Henry K. Ram, Rajeev J. Hoshino, Isako Prasad, Sheila Wang, Haifeng Hemenway, Roe B., Jr. Deming, Robert Knoedl, Thomas London, Joanna Crankshaw, Donald S. Pan, Janet L. Compound Semiconductor Materials Compound Semiconductor Devices Epitaxy-on-Electronics Integration Technology InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics The OPTOCHIP Project Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED Laser Diode Heterostructures by Solid Source MBE using a GaP Cell Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors Microwave Characterization of Optoelectronic Devices Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors Si-on-GaAs Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications. Defense Advanced Research Projects Agency Joint Services Electronics Program Grant DAAH04-95-1-0038 MIT Lincoln Laboratory National Science Foundation U.S. Navy - Office of Naval Research Defense Advanced Research Projects Agency/National Center for Integrated Photonics Technology MIT Lincoln Laboratory National Center for Integrated Photonics Technology University of Ulm, Ulm, Germany General Motors Corporation Fellowship Lockheed-Martin Corporation 2010-07-17T01:38:45Z 2010-07-17T01:38:45Z 1997-01-01 to 1997-12-31 Technical Report RLE_PR_140_01_01s_01 http://hdl.handle.net/1721.1/57412 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997 Solid State Physics, Electronics and Optics Materials and Fabrication Compound Semiconductor Materials and Devices Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
spellingShingle | Compound Semiconductor Materials Compound Semiconductor Devices Epitaxy-on-Electronics Integration Technology InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics The OPTOCHIP Project Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED Laser Diode Heterostructures by Solid Source MBE using a GaP Cell Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors Microwave Characterization of Optoelectronic Devices Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors Si-on-GaAs Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration Fonstad, Clifton G., Jr. Ahadian, Joseph F. Royter, Yakov Patterson, Steven G. Viadyananthan, Praveen T. Postigo, P. Aitor Petrich, Gale S. Kolodziejski, Leslie A. Mikkelson, James M. Goodhue, William D. Braddock, David Mull, Daniel E. Choy, Henry K. Ram, Rajeev J. Hoshino, Isako Prasad, Sheila Wang, Haifeng Hemenway, Roe B., Jr. Deming, Robert Knoedl, Thomas London, Joanna Crankshaw, Donald S. Pan, Janet L. Compound Semiconductor Materials and Devices |
title | Compound Semiconductor Materials and Devices |
title_full | Compound Semiconductor Materials and Devices |
title_fullStr | Compound Semiconductor Materials and Devices |
title_full_unstemmed | Compound Semiconductor Materials and Devices |
title_short | Compound Semiconductor Materials and Devices |
title_sort | compound semiconductor materials and devices |
topic | Compound Semiconductor Materials Compound Semiconductor Devices Epitaxy-on-Electronics Integration Technology InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics The OPTOCHIP Project Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED Laser Diode Heterostructures by Solid Source MBE using a GaP Cell Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors Microwave Characterization of Optoelectronic Devices Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors Si-on-GaAs Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration |
url | http://hdl.handle.net/1721.1/57412 |
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