Compound Semiconductor Materials and Devices

Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications.

Bibliographic Details
Main Authors: Fonstad, Clifton G., Jr., Ahadian, Joseph F., Royter, Yakov, Patterson, Steven G., Viadyananthan, Praveen T., Postigo, P. Aitor, Petrich, Gale S., Kolodziejski, Leslie A., Mikkelson, James M., Goodhue, William D., Braddock, David, Mull, Daniel E., Choy, Henry K., Ram, Rajeev J., Hoshino, Isako, Prasad, Sheila, Wang, Haifeng, Hemenway, Roe B., Jr., Deming, Robert, Knoedl, Thomas, London, Joanna, Crankshaw, Donald S., Pan, Janet L.
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
Online Access:http://hdl.handle.net/1721.1/57412
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author Fonstad, Clifton G., Jr.
Ahadian, Joseph F.
Royter, Yakov
Patterson, Steven G.
Viadyananthan, Praveen T.
Postigo, P. Aitor
Petrich, Gale S.
Kolodziejski, Leslie A.
Mikkelson, James M.
Goodhue, William D.
Braddock, David
Mull, Daniel E.
Choy, Henry K.
Ram, Rajeev J.
Hoshino, Isako
Prasad, Sheila
Wang, Haifeng
Hemenway, Roe B., Jr.
Deming, Robert
Knoedl, Thomas
London, Joanna
Crankshaw, Donald S.
Pan, Janet L.
author_facet Fonstad, Clifton G., Jr.
Ahadian, Joseph F.
Royter, Yakov
Patterson, Steven G.
Viadyananthan, Praveen T.
Postigo, P. Aitor
Petrich, Gale S.
Kolodziejski, Leslie A.
Mikkelson, James M.
Goodhue, William D.
Braddock, David
Mull, Daniel E.
Choy, Henry K.
Ram, Rajeev J.
Hoshino, Isako
Prasad, Sheila
Wang, Haifeng
Hemenway, Roe B., Jr.
Deming, Robert
Knoedl, Thomas
London, Joanna
Crankshaw, Donald S.
Pan, Janet L.
author_sort Fonstad, Clifton G., Jr.
collection MIT
description Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications.
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spelling mit-1721.1/574122019-04-12T23:58:49Z Compound Semiconductor Materials and Devices Fonstad, Clifton G., Jr. Ahadian, Joseph F. Royter, Yakov Patterson, Steven G. Viadyananthan, Praveen T. Postigo, P. Aitor Petrich, Gale S. Kolodziejski, Leslie A. Mikkelson, James M. Goodhue, William D. Braddock, David Mull, Daniel E. Choy, Henry K. Ram, Rajeev J. Hoshino, Isako Prasad, Sheila Wang, Haifeng Hemenway, Roe B., Jr. Deming, Robert Knoedl, Thomas London, Joanna Crankshaw, Donald S. Pan, Janet L. Compound Semiconductor Materials Compound Semiconductor Devices Epitaxy-on-Electronics Integration Technology InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics The OPTOCHIP Project Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED Laser Diode Heterostructures by Solid Source MBE using a GaP Cell Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors Microwave Characterization of Optoelectronic Devices Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors Si-on-GaAs Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications. Defense Advanced Research Projects Agency Joint Services Electronics Program Grant DAAH04-95-1-0038 MIT Lincoln Laboratory National Science Foundation U.S. Navy - Office of Naval Research Defense Advanced Research Projects Agency/National Center for Integrated Photonics Technology MIT Lincoln Laboratory National Center for Integrated Photonics Technology University of Ulm, Ulm, Germany General Motors Corporation Fellowship Lockheed-Martin Corporation 2010-07-17T01:38:45Z 2010-07-17T01:38:45Z 1997-01-01 to 1997-12-31 Technical Report RLE_PR_140_01_01s_01 http://hdl.handle.net/1721.1/57412 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997 Solid State Physics, Electronics and Optics Materials and Fabrication Compound Semiconductor Materials and Devices Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
spellingShingle Compound Semiconductor Materials
Compound Semiconductor Devices
Epitaxy-on-Electronics Integration Technology
InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics
The OPTOCHIP Project
Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED
Laser Diode Heterostructures by Solid Source MBE using a GaP Cell
Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets
Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors
Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics
Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors
Microwave Characterization of Optoelectronic Devices
Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips
Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors
Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors
Si-on-GaAs
Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques
Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques
Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques
Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits
Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration
Fonstad, Clifton G., Jr.
Ahadian, Joseph F.
Royter, Yakov
Patterson, Steven G.
Viadyananthan, Praveen T.
Postigo, P. Aitor
Petrich, Gale S.
Kolodziejski, Leslie A.
Mikkelson, James M.
Goodhue, William D.
Braddock, David
Mull, Daniel E.
Choy, Henry K.
Ram, Rajeev J.
Hoshino, Isako
Prasad, Sheila
Wang, Haifeng
Hemenway, Roe B., Jr.
Deming, Robert
Knoedl, Thomas
London, Joanna
Crankshaw, Donald S.
Pan, Janet L.
Compound Semiconductor Materials and Devices
title Compound Semiconductor Materials and Devices
title_full Compound Semiconductor Materials and Devices
title_fullStr Compound Semiconductor Materials and Devices
title_full_unstemmed Compound Semiconductor Materials and Devices
title_short Compound Semiconductor Materials and Devices
title_sort compound semiconductor materials and devices
topic Compound Semiconductor Materials
Compound Semiconductor Devices
Epitaxy-on-Electronics Integration Technology
InGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronics
The OPTOCHIP Project
Low-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LED
Laser Diode Heterostructures by Solid Source MBE using a GaP Cell
Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facets
Dry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectors
Monolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronics
Hyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductors
Microwave Characterization of Optoelectronic Devices
Monolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chips
Design of VCSEL-Based Resonant Cavity Enhanced Photodetectors
Analysis of VCSEL-Based Resonant Cavity Enhanced Photodetectors
Si-on-GaAs
Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniques
Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniques
Monolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniques
Aligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuits
Normal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integration
url http://hdl.handle.net/1721.1/57412
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