Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Contains an introduction, reports on three research projects, research conclusions and a list of publications.
| Main Authors: | , , , |
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| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/57427 |
| _version_ | 1811072330016751616 |
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| author | del Alamo, Jesús A. Somerville, Mark H. Ernst, Alexander N. Nici, Kathleen A. |
| author_facet | del Alamo, Jesús A. Somerville, Mark H. Ernst, Alexander N. Nici, Kathleen A. |
| author_sort | del Alamo, Jesús A. |
| collection | MIT |
| description | Contains an introduction, reports on three research projects, research conclusions and a list of publications. |
| first_indexed | 2024-09-23T09:04:16Z |
| format | Technical Report |
| id | mit-1721.1/57427 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T09:04:16Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/574272019-04-10T16:28:11Z Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors del Alamo, Jesús A. Somerville, Mark H. Ernst, Alexander N. Nici, Kathleen A. Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors New Measurement Technique for On-State Breakdown Voltage On-State Breakdown Physics New Model for On-state Breakdown Voltage Contains an introduction, reports on three research projects, research conclusions and a list of publications. Joint Services Electronics Program Contract DAAHO4-95-1-0038 2010-07-17T01:41:13Z 2010-07-17T01:41:13Z 1997-01-01 to 1997-12-31 Technical Report RLE_PR_140_01_01s_02 http://hdl.handle.net/1721.1/57427 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997 Solid State Physics, Electronics and Optics Materials and Fabrication Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors New Measurement Technique for On-State Breakdown Voltage On-State Breakdown Physics New Model for On-state Breakdown Voltage del Alamo, Jesús A. Somerville, Mark H. Ernst, Alexander N. Nici, Kathleen A. Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_full | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_fullStr | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_full_unstemmed | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_short | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| title_sort | physics of inaias ingaas heterostructure field effect transistors |
| topic | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors New Measurement Technique for On-State Breakdown Voltage On-State Breakdown Physics New Model for On-state Breakdown Voltage |
| url | http://hdl.handle.net/1721.1/57427 |
| work_keys_str_mv | AT delalamojesusa physicsofinaiasingaasheterostructurefieldeffecttransistors AT somervillemarkh physicsofinaiasingaasheterostructurefieldeffecttransistors AT ernstalexandern physicsofinaiasingaasheterostructurefieldeffecttransistors AT nicikathleena physicsofinaiasingaasheterostructurefieldeffecttransistors |