Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors

Contains an introduction, reports on three research projects, research conclusions and a list of publications.

Bibliographic Details
Main Authors:	del Alamo, Jesús A., Somerville, Mark H., Ernst, Alexander N., Nici, Kathleen A.
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors New Measurement Technique for On-State Breakdown Voltage On-State Breakdown Physics New Model for On-state Breakdown Voltage
Online Access:	http://hdl.handle.net/1721.1/57427