Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2010
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| Online Access: | http://hdl.handle.net/1721.1/58378 |
| _version_ | 1826198137012748288 |
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| author | Reading, Arthur H. (Arthur Henry) |
| author2 | Silvija Gradečak. |
| author_facet | Silvija Gradečak. Reading, Arthur H. (Arthur Henry) |
| author_sort | Reading, Arthur H. (Arthur Henry) |
| collection | MIT |
| description | Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009. |
| first_indexed | 2024-09-23T10:59:35Z |
| format | Thesis |
| id | mit-1721.1/58378 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T10:59:35Z |
| publishDate | 2010 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/583782019-04-11T06:27:11Z Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon Reading, Arthur H. (Arthur Henry) Silvija Gradečak. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Materials Science and Engineering. Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009. "May 2009." Cataloged from PDF version of thesis. Includes bibliographical references (p. 49-50). 'Black silicon' refers to silicon that has been treated in a laser-ablation process to incorporate large amounts of chalcogen dopants. The material has been found to have greatly increased absorbance of visible and infared wavelength light in comparison to undoped crystalline silicon. Selenium-doped black silicon that had been annealed at different temperatures were studied using transmission electron microscopy (TEM) and electron diffraction. The goal of the investigation was to characterize the structure of the laser-altered regions of the material. In addition, energy dispersive X-ray spectroscopy (EDX) was conducted in a scanning transmission electron microscope (STEM) in order to map spatial distribution of the selenium and the silicon were located within the material. The results of the TEM study showed roughly conical peaks of varying shapes protruding about 1 [mu]m from the surface of the material. The material is altered up to a depth of up to 1-2 [mu]m, where polycrystalline or amorphous layers were observed. Electron diffraction studies revealed increased crystallinity in the annealed sample. A continuous, sharp interface between the affected region and unaltered substrate was found and particles of diameter 5-100 nm embedded within the silicon were observed. The STEM-EDX studies showed that the selenium was dispersed inhomogenously throughout the material. The selenium is concentrated near the interface of the unaltered Si substrate and the laser-altered layer and a high local concentration of selenium in the embedded particles was recorded. The findings in this study provide a first look at the underlying structure of black silicon and will lead to future work characterizing the material. by Arthur H. Reading. S.B. 2010-09-03T18:30:57Z 2010-09-03T18:30:57Z 2009 Thesis http://hdl.handle.net/1721.1/58378 630057293 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 50 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering. Reading, Arthur H. (Arthur Henry) Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon |
| title | Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon |
| title_full | Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon |
| title_fullStr | Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon |
| title_full_unstemmed | Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon |
| title_short | Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon |
| title_sort | cross sectional transmission electron microscopy study of femtosecond laser irradiated selenium doped black silicon |
| topic | Materials Science and Engineering. |
| url | http://hdl.handle.net/1721.1/58378 |
| work_keys_str_mv | AT readingarthurharthurhenry crosssectionaltransmissionelectronmicroscopystudyoffemtosecondlaserirradiatedseleniumdopedblacksilicon |