Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication
Block copolymers have been proposed for self-assembled nanolithography because they can spontaneously form well-ordered nanoscale periodic patterns of lines or dots in a rapid, low-cost process. By templating the selfassembly, patterns of increasing complexity can be generated, for example arrays of...
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| Format: | Article |
| Language: | en_US |
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SPIE
2010
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| Online Access: | http://hdl.handle.net/1721.1/58560 https://orcid.org/0000-0003-2262-1249 https://orcid.org/0000-0003-3473-446X https://orcid.org/0000-0001-7453-9031 https://orcid.org/0000-0003-2055-4900 |
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| author | Ross, Caroline A. Manners, I. Gwyther, J. Jung, Yeon Sik Chuang, Vivian Peng-Wei Son, Jeong Gon Gotrik, Kevin W. Mickiewicz, R. A. Yang, Joel K. W. Chang, J. B. Berggren, Karl K. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Ross, Caroline A. Manners, I. Gwyther, J. Jung, Yeon Sik Chuang, Vivian Peng-Wei Son, Jeong Gon Gotrik, Kevin W. Mickiewicz, R. A. Yang, Joel K. W. Chang, J. B. Berggren, Karl K. |
| author_sort | Ross, Caroline A. |
| collection | MIT |
| description | Block copolymers have been proposed for self-assembled nanolithography because they can spontaneously form well-ordered nanoscale periodic patterns of lines or dots in a rapid, low-cost process. By templating the selfassembly, patterns of increasing complexity can be generated, for example arrays of lines with bends or junctions. This offers the possibility of using a sparse template, written by electron-beam lithography or other means, to organize a dense array of nanoscale features. Pattern transfer is simplified if one block is etch resistant and one easily removable, and in this work we use a diblock copolymer or a triblock terpolymer with one Sicontaining block such as polydimethylsiloxane or polyferrocenylsilane, and one or two organic blocks such as polystyrene or polyisoprene. Removal of the organic block(s) with an oxygen plasma leaves a pattern of Sicontaining material which can be used as an etch mask for subsequent pattern transfer to make metallization lines or magnetic nanostructures with feature sizes below 10 nm and periodicity below 20 nm. |
| first_indexed | 2024-09-23T14:52:18Z |
| format | Article |
| id | mit-1721.1/58560 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:52:18Z |
| publishDate | 2010 |
| publisher | SPIE |
| record_format | dspace |
| spelling | mit-1721.1/585602022-09-29T11:08:12Z Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication Ross, Caroline A. Manners, I. Gwyther, J. Jung, Yeon Sik Chuang, Vivian Peng-Wei Son, Jeong Gon Gotrik, Kevin W. Mickiewicz, R. A. Yang, Joel K. W. Chang, J. B. Berggren, Karl K. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Ross, Caroline A. Ross, Caroline A. Jung, Yeon Sik Chuang, Vivian Peng-Wei Son, Jeong Gon Gotrik, Kevin W. Mickiewicz, R. A. Yang, Joel K. W. Chang, J. B. Berggren, Karl K. Block copolymers have been proposed for self-assembled nanolithography because they can spontaneously form well-ordered nanoscale periodic patterns of lines or dots in a rapid, low-cost process. By templating the selfassembly, patterns of increasing complexity can be generated, for example arrays of lines with bends or junctions. This offers the possibility of using a sparse template, written by electron-beam lithography or other means, to organize a dense array of nanoscale features. Pattern transfer is simplified if one block is etch resistant and one easily removable, and in this work we use a diblock copolymer or a triblock terpolymer with one Sicontaining block such as polydimethylsiloxane or polyferrocenylsilane, and one or two organic blocks such as polystyrene or polyisoprene. Removal of the organic block(s) with an oxygen plasma leaves a pattern of Sicontaining material which can be used as an etch mask for subsequent pattern transfer to make metallization lines or magnetic nanostructures with feature sizes below 10 nm and periodicity below 20 nm. National Science Foundation United States. Office of Naval Research Semiconductor Research Corporation 2010-09-15T21:04:15Z 2010-09-15T21:04:15Z 2010-03 2010-02 Article http://purl.org/eprint/type/JournalArticle 0277-786X Proc. SPIE, Vol. 7637, 76370H (2010) http://hdl.handle.net/1721.1/58560 Ross, C. A. et al. “Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication.” Alternative Lithographic Technologies II. Ed. Daniel J. C. Herr. San Jose, California, USA: SPIE, 2010. 76370H-7. ©2010 SPIE. https://orcid.org/0000-0003-2262-1249 https://orcid.org/0000-0003-3473-446X https://orcid.org/0000-0001-7453-9031 https://orcid.org/0000-0003-2055-4900 en_US http://dx.doi.org/10.1117/12.848502 Proceedings of SPIE--the International Society for Optical Engineering Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE SPIE |
| spellingShingle | Ross, Caroline A. Manners, I. Gwyther, J. Jung, Yeon Sik Chuang, Vivian Peng-Wei Son, Jeong Gon Gotrik, Kevin W. Mickiewicz, R. A. Yang, Joel K. W. Chang, J. B. Berggren, Karl K. Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication |
| title | Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication |
| title_full | Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication |
| title_fullStr | Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication |
| title_full_unstemmed | Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication |
| title_short | Templated self-assembly of Si-containing block copolymers for nanoscale device fabrication |
| title_sort | templated self assembly of si containing block copolymers for nanoscale device fabrication |
| url | http://hdl.handle.net/1721.1/58560 https://orcid.org/0000-0003-2262-1249 https://orcid.org/0000-0003-3473-446X https://orcid.org/0000-0001-7453-9031 https://orcid.org/0000-0003-2055-4900 |
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