Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope

Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope

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We use a scanning tunneling microscope to probe single-electron charging phenomena in individual CdSe/ZnS (core/shell) quantum dots (QDs) at room temperature. The QDs are deposited on top of a bare Au thin film and form a double-barrier tunnel junction (DBTJ) between the tip, QD, and substrate. Anal...

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Bibliographic Details
Main Authors: Bulovic, Vladimir, Anikeeva, Polina Olegovna, Panzer, Matthew J., Wood, Vanessa Claire, Hummon, M. R., Stollenwerk, A. J., Narayanamurti, V.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/58701
https://orcid.org/0000-0001-6495-5197
https://orcid.org/0000-0002-0960-2580
https://orcid.org/0000-0001-6435-0227
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