Exciton front propagation in photoexcited GaAs quantum wells

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity durin...

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Main Authors: Yang, Sen, Butov, L. V., Simons, B. D., Gossard, A. C., Levitov, Leonid
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/58780
https://orcid.org/0000-0002-4268-731X
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author Yang, Sen
Butov, L. V.
Simons, B. D.
Gossard, A. C.
Levitov, Leonid
author2 Massachusetts Institute of Technology. Department of Physics
author_facet Massachusetts Institute of Technology. Department of Physics
Yang, Sen
Butov, L. V.
Simons, B. D.
Gossard, A. C.
Levitov, Leonid
author_sort Yang, Sen
collection MIT
description We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.
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spelling mit-1721.1/587802022-09-27T17:45:23Z Exciton front propagation in photoexcited GaAs quantum wells Yang, Sen Butov, L. V. Simons, B. D. Gossard, A. C. Levitov, Leonid Massachusetts Institute of Technology. Department of Physics Levitov, Leonid Levitov, Leonid We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport. United States. Army Research Office National Science Foundation 2010-09-30T14:44:56Z 2010-09-30T14:44:56Z 2010-03 2010-02 Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/58780 Yang, Sen et al. “Exciton front propagation in photoexcited GaAs quantum wells.” Physical Review B 81.11 (2010): 115320. © 2010 The American Physical Society https://orcid.org/0000-0002-4268-731X en_US http://dx.doi.org/10.1103/PhysRevB.81.115320 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS
spellingShingle Yang, Sen
Butov, L. V.
Simons, B. D.
Gossard, A. C.
Levitov, Leonid
Exciton front propagation in photoexcited GaAs quantum wells
title Exciton front propagation in photoexcited GaAs quantum wells
title_full Exciton front propagation in photoexcited GaAs quantum wells
title_fullStr Exciton front propagation in photoexcited GaAs quantum wells
title_full_unstemmed Exciton front propagation in photoexcited GaAs quantum wells
title_short Exciton front propagation in photoexcited GaAs quantum wells
title_sort exciton front propagation in photoexcited gaas quantum wells
url http://hdl.handle.net/1721.1/58780
https://orcid.org/0000-0002-4268-731X
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