An oscilloscope array for high-impedance device characterization
An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameter...
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Institute of Electrical and Electronics Engineers
2010
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Online Access: | http://hdl.handle.net/1721.1/58952 https://orcid.org/0000-0002-5977-2748 |
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author | Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. |
author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. |
author_sort | Stojanovic, Vladimir Marko |
collection | MIT |
description | An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameters and delay characteristics of high impedance devices such as carbon nanotubes (CNTs) and graphene. Measurement results show that the capacitance compensation technique enhances the bandwidth by 3X for impedances between 2 kOmega and 20 kOmega. |
first_indexed | 2024-09-23T08:49:08Z |
format | Article |
id | mit-1721.1/58952 |
institution | Massachusetts Institute of Technology |
language | en_US |
last_indexed | 2024-09-23T08:49:08Z |
publishDate | 2010 |
publisher | Institute of Electrical and Electronics Engineers |
record_format | dspace |
spelling | mit-1721.1/589522022-09-30T11:28:31Z An oscilloscope array for high-impedance device characterization Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Stojanovic, Vladimir Marko Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameters and delay characteristics of high impedance devices such as carbon nanotubes (CNTs) and graphene. Measurement results show that the capacitance compensation technique enhances the bandwidth by 3X for impedances between 2 kOmega and 20 kOmega. Interconnect Focus Center 2010-10-07T20:05:17Z 2010-10-07T20:05:17Z 2009-11 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-4354-3 1930-8833 INSPEC Accession Number: 10975379 http://hdl.handle.net/1721.1/58952 Chen, F., A. Chandrakasan, and V. Stojanovic. “An oscilloscope array for high-impedance device characterization.” ESSCIRC, 2009. ESSCIRC '09. Proceedings of. 2009. 112-115. © 2009 IEEE https://orcid.org/0000-0002-5977-2748 en_US http://dx.doi.org/10.1109/ESSCIRC.2009.5325935 Proceedings of ESSCIRC, 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
spellingShingle | Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. An oscilloscope array for high-impedance device characterization |
title | An oscilloscope array for high-impedance device characterization |
title_full | An oscilloscope array for high-impedance device characterization |
title_fullStr | An oscilloscope array for high-impedance device characterization |
title_full_unstemmed | An oscilloscope array for high-impedance device characterization |
title_short | An oscilloscope array for high-impedance device characterization |
title_sort | oscilloscope array for high impedance device characterization |
url | http://hdl.handle.net/1721.1/58952 https://orcid.org/0000-0002-5977-2748 |
work_keys_str_mv | AT stojanovicvladimirmarko anoscilloscopearrayforhighimpedancedevicecharacterization AT chenfredfuchin anoscilloscopearrayforhighimpedancedevicecharacterization AT chandrakasanananthap anoscilloscopearrayforhighimpedancedevicecharacterization AT stojanovicvladimirmarko oscilloscopearrayforhighimpedancedevicecharacterization AT chenfredfuchin oscilloscopearrayforhighimpedancedevicecharacterization AT chandrakasanananthap oscilloscopearrayforhighimpedancedevicecharacterization |