An oscilloscope array for high-impedance device characterization

An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameter...

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Main Authors: Stojanovic, Vladimir Marko, Chen, Fred Fu-Chin, Chandrakasan, Anantha P.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/58952
https://orcid.org/0000-0002-5977-2748
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author Stojanovic, Vladimir Marko
Chen, Fred Fu-Chin
Chandrakasan, Anantha P.
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Stojanovic, Vladimir Marko
Chen, Fred Fu-Chin
Chandrakasan, Anantha P.
author_sort Stojanovic, Vladimir Marko
collection MIT
description An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameters and delay characteristics of high impedance devices such as carbon nanotubes (CNTs) and graphene. Measurement results show that the capacitance compensation technique enhances the bandwidth by 3X for impedances between 2 kOmega and 20 kOmega.
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spelling mit-1721.1/589522022-09-30T11:28:31Z An oscilloscope array for high-impedance device characterization Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Stojanovic, Vladimir Marko Stojanovic, Vladimir Marko Chen, Fred Fu-Chin Chandrakasan, Anantha P. An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameters and delay characteristics of high impedance devices such as carbon nanotubes (CNTs) and graphene. Measurement results show that the capacitance compensation technique enhances the bandwidth by 3X for impedances between 2 kOmega and 20 kOmega. Interconnect Focus Center 2010-10-07T20:05:17Z 2010-10-07T20:05:17Z 2009-11 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-4354-3 1930-8833 INSPEC Accession Number: 10975379 http://hdl.handle.net/1721.1/58952 Chen, F., A. Chandrakasan, and V. Stojanovic. “An oscilloscope array for high-impedance device characterization.” ESSCIRC, 2009. ESSCIRC '09. Proceedings of. 2009. 112-115. © 2009 IEEE https://orcid.org/0000-0002-5977-2748 en_US http://dx.doi.org/10.1109/ESSCIRC.2009.5325935 Proceedings of ESSCIRC, 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE
spellingShingle Stojanovic, Vladimir Marko
Chen, Fred Fu-Chin
Chandrakasan, Anantha P.
An oscilloscope array for high-impedance device characterization
title An oscilloscope array for high-impedance device characterization
title_full An oscilloscope array for high-impedance device characterization
title_fullStr An oscilloscope array for high-impedance device characterization
title_full_unstemmed An oscilloscope array for high-impedance device characterization
title_short An oscilloscope array for high-impedance device characterization
title_sort oscilloscope array for high impedance device characterization
url http://hdl.handle.net/1721.1/58952
https://orcid.org/0000-0002-5977-2748
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