On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si
The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through s...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/58959 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| _version_ | 1826193496160075776 |
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| author | Chung, Jinwook Lu, Bin Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chung, Jinwook Lu, Bin Palacios, Tomas |
| author_sort | Chung, Jinwook |
| collection | MIT |
| description | The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the fabrication of Si CMOS electronics on these substrates without degrading the performance of the embedded nitride layer. In addition, GaN transistors on Si (001) have been fabricated on these substrates for the first time. Some of the many new circuits and devices that this integration allows include high power analog-to-digital converters, high speed differential amplifiers, normally-off power transistors, and highly-compact power regulator circuits. |
| first_indexed | 2024-09-23T09:40:06Z |
| format | Article |
| id | mit-1721.1/58959 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:40:06Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/589592022-09-30T16:03:38Z On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si Chung, Jinwook Lu, Bin Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Chung, Jinwook Lu, Bin Palacios, Tomas Silicon Nitride Semiconductors MOSFET Integration High Electron Mobility Transistor HEMT The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the fabrication of Si CMOS electronics on these substrates without degrading the performance of the embedded nitride layer. In addition, GaN transistors on Si (001) have been fabricated on these substrates for the first time. Some of the many new circuits and devices that this integration allows include high power analog-to-digital converters, high speed differential amplifiers, normally-off power transistors, and highly-compact power regulator circuits. United States. Defense Advanced Research Projects Agency (DARPA) (Young Faculty Award) 2010-10-07T21:09:45Z 2010-10-07T21:09:45Z 2009-07 2009-06 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-2803-8 0149-645X INSPEC Accession Number: 10788700 http://hdl.handle.net/1721.1/58959 Chung, J.W., Bin Lu, and T. Palacios. “On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1117-1120. © Copyright 2010 IEEE https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 en_US http://dx.doi.org/10.1109/MWSYM.2009.5165897 Proceedings of the IEEE MTT-S International Microwave Symposium Digest, 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Silicon Nitride Semiconductors MOSFET Integration High Electron Mobility Transistor HEMT Chung, Jinwook Lu, Bin Palacios, Tomas On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si |
| title | On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si |
| title_full | On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si |
| title_fullStr | On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si |
| title_full_unstemmed | On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si |
| title_short | On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si |
| title_sort | on wafer integration of nitrides and si devices bringing the power of polarization to si |
| topic | Silicon Nitride Semiconductors MOSFET Integration High Electron Mobility Transistor HEMT |
| url | http://hdl.handle.net/1721.1/58959 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| work_keys_str_mv | AT chungjinwook onwaferintegrationofnitridesandsidevicesbringingthepowerofpolarizationtosi AT lubin onwaferintegrationofnitridesandsidevicesbringingthepowerofpolarizationtosi AT palaciostomas onwaferintegrationofnitridesandsidevicesbringingthepowerofpolarizationtosi |