On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si

On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si

The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through s...

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Bibliographic Details
Main Authors: Chung, Jinwook, Lu, Bin, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
Silicon
Nitride Semiconductors
MOSFET
Integration
High Electron Mobility Transistor
HEMT
Online Access:http://hdl.handle.net/1721.1/58959
https://orcid.org/0000-0002-2190-563X
https://orcid.org/0000-0003-2208-0665

Internet

http://hdl.handle.net/1721.1/58959
https://orcid.org/0000-0002-2190-563X
https://orcid.org/0000-0003-2208-0665

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