Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate...
| Main Authors: | , |
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/58977 |
| _version_ | 1826204106634559488 |
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| author | Demirtas, Sefa del Alamo, Jesus A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Demirtas, Sefa del Alamo, Jesus A. |
| author_sort | Demirtas, Sefa |
| collection | MIT |
| description | We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate current takes place. In general, devices on Si have a relatively high critical voltage although its distribution on a wafer is fairly broad even on a short-range scale. |
| first_indexed | 2024-09-23T12:49:00Z |
| format | Article |
| id | mit-1721.1/58977 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:49:00Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/589772022-09-28T10:12:41Z Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate Demirtas, Sefa del Alamo, Jesus A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science del Alamo, Jesus A. Demirtas, Sefa del Alamo, Jesus A. We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate current takes place. In general, devices on Si have a relatively high critical voltage although its distribution on a wafer is fairly broad even on a short-range scale. United States. Defense Advanced Research Projects Agency (DARPA) (ARL contract #W911QX-05-C-0087) United States. Office of Naval Research (Grant #N00014-08-1-0655) 2010-10-08T17:21:16Z 2010-10-08T17:21:16Z 2009-11 2009-10 Article http://purl.org/eprint/type/JournalArticle 978-0-7908-0124-7 INSPEC Accession Number: 10964140 http://hdl.handle.net/1721.1/58977 Demirtas, S., and J.A. del Alamo. “Critical voltage for electrical reliability of GaN high electron mobility transistors on Si substrate.” Reliability of Compound Semiconductors Digest (ROCS), 2009. 2009. 53-56. © Copyright 2009 IEEE en_US http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5313988 Reliability of Compound Semiconductors Digest (ROCS), 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Demirtas, Sefa del Alamo, Jesus A. Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate |
| title | Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate |
| title_full | Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate |
| title_fullStr | Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate |
| title_full_unstemmed | Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate |
| title_short | Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate |
| title_sort | critical voltage for electrical reliability of gan high electron mobility transistors on si substrate |
| url | http://hdl.handle.net/1721.1/58977 |
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