Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate

Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate

We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate...

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Detaylı Bibliyografya
Asıl Yazarlar: Demirtas, Sefa, del Alamo, Jesus A.
Diğer Yazarlar: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Materyal Türü: Makale
Dil:en_US
Baskı/Yayın Bilgisi: Institute of Electrical and Electronics Engineers 2010
Online Erişim:http://hdl.handle.net/1721.1/58977

Internet

http://hdl.handle.net/1721.1/58977

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