Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2010
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| Online Access: | http://hdl.handle.net/1721.1/59230 |
| _version_ | 1826203986389106688 |
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| author | Reina Ceeco, Alfonso |
| author2 | Jing Kong. |
| author_facet | Jing Kong. Reina Ceeco, Alfonso |
| author_sort | Reina Ceeco, Alfonso |
| collection | MIT |
| description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. |
| first_indexed | 2024-09-23T12:47:01Z |
| format | Thesis |
| id | mit-1721.1/59230 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T12:47:01Z |
| publishDate | 2010 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/592302019-04-10T15:40:29Z Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel Reina Ceeco, Alfonso Jing Kong. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Materials Science and Engineering. Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. Includes bibliographical references (p. 169-177). An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene can be transferred from the Ni surface to dielectric substrates in order to integrate them to graphene device prototypes. Uniform single layer graphene can be grown with the same process by using single crystalline Ni with a (111) surface orientation. Raman spectroscopy and electron diffraction characterization is undertaken in order to determine the nature of the layer stacking for the case of multilayer graphene. by Alfonso Reina Ceeco. Ph.D. 2010-10-12T18:48:49Z 2010-10-12T18:48:49Z 2010 2010 Thesis http://hdl.handle.net/1721.1/59230 666447099 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 177 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering. Reina Ceeco, Alfonso Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel |
| title | Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel |
| title_full | Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel |
| title_fullStr | Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel |
| title_full_unstemmed | Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel |
| title_short | Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel |
| title_sort | single and few layer graphene by ambient pressure chemical vapor deposition on nickel |
| topic | Materials Science and Engineering. |
| url | http://hdl.handle.net/1721.1/59230 |
| work_keys_str_mv | AT reinaceecoalfonso singleandfewlayergraphenebyambientpressurechemicalvapordepositiononnickel |