Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate ring; as well as on the number of sides that the device is surrounded by the contact ring. We find that the unilateral gain is impacted by the substrate resistance (R[su...

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Bibliographic Details
Main Authors: Jagannathan, Basanth, Wang, Jing, Sweeney, Susan, Li, Hongmei, Gogineni, Usha, del Alamo, Jesus A.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
RF CMOS
Noise
Substrate resistance
maximum oscillation frequency
power gain
unilateral gain
Online Access:http://hdl.handle.net/1721.1/59339

Internet

http://hdl.handle.net/1721.1/59339

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