Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition
We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga[subscript 0.35] In[subscript 0.6] As/Al[subscript 0.70] In[subscript 0.30]As (0.8/-1.5%) quantum wells.
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59384 https://orcid.org/0000-0003-1982-4053 |
| _version_ | 1826204508099706880 |
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| author | Hsu, Allen Long Hu, Qing Williams, Benjamin |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hsu, Allen Long Hu, Qing Williams, Benjamin |
| author_sort | Hsu, Allen Long |
| collection | MIT |
| description | We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga[subscript 0.35] In[subscript 0.6] As/Al[subscript 0.70] In[subscript 0.30]As (0.8/-1.5%) quantum wells. |
| first_indexed | 2024-09-23T12:56:43Z |
| format | Article |
| id | mit-1721.1/59384 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:56:43Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/593842022-09-28T11:01:12Z Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition Hsu, Allen Long Hu, Qing Williams, Benjamin Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Research Laboratory of Electronics Hu, Qing Hsu, Allen Long Hu, Qing We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga[subscript 0.35] In[subscript 0.6] As/Al[subscript 0.70] In[subscript 0.30]As (0.8/-1.5%) quantum wells. United States. Defense Advanced Research Projects Agency (DARPA) 2010-10-15T18:47:45Z 2010-10-15T18:47:45Z 2009-08 2009-06 Article http://purl.org/eprint/type/JournalArticle 978-1-55752-869-8 INSPEC Accession Number: 10842864 http://hdl.handle.net/1721.1/59384 Hsu, A., Qing Hu, and B. Williams. “Four-well highly strained Quantum Cascade Lasers grown by metal-organic chemical vapor deposition.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. 1-2. ©2009 IEEE. https://orcid.org/0000-0003-1982-4053 en_US http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5225369&tag=1 Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Hsu, Allen Long Hu, Qing Williams, Benjamin Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition |
| title | Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition |
| title_full | Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition |
| title_fullStr | Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition |
| title_full_unstemmed | Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition |
| title_short | Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition |
| title_sort | four well highly strained quantum cascade lasers grown by metal organic chemical vapor deposition |
| url | http://hdl.handle.net/1721.1/59384 https://orcid.org/0000-0003-1982-4053 |
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