Quantum capacitance in scaled down III-V FETs
We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59416 |
| _version_ | 1826208809052274688 |
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| author | Jin, Donghyun Kim, Dae-Hyun Kim, Tae-Woo del Alamo, Jesus A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Jin, Donghyun Kim, Dae-Hyun Kim, Tae-Woo del Alamo, Jesus A. |
| author_sort | Jin, Donghyun |
| collection | MIT |
| description | We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices, the quantum capacitance significantly lowers the overall gate capacitance. In addition, the channel centroid capacitance is also found to have a significant impact on gate capacitance. Our model provides a number of suggestions for capacitance scaling in future III-V FETs. |
| first_indexed | 2024-09-23T14:12:39Z |
| format | Article |
| id | mit-1721.1/59416 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:12:39Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/594162022-09-28T19:12:32Z Quantum capacitance in scaled down III-V FETs Jin, Donghyun Kim, Dae-Hyun Kim, Tae-Woo del Alamo, Jesus A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories del Alamo, Jesus A. Jin, Donghyun Kim, Dae-Hyun Kim, Tae-Woo del Alamo, Jesus A. We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices, the quantum capacitance significantly lowers the overall gate capacitance. In addition, the channel centroid capacitance is also found to have a significant impact on gate capacitance. Our model provides a number of suggestions for capacitance scaling in future III-V FETs. Intel Corporation Focus Center Research Program. Center for Materials, Structures and Devices 2010-10-20T12:30:58Z 2010-10-20T12:30:58Z 2010-03 2009-12 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-5639-0 978-1-4244-5640-6 INSPEC Accession Number: 11207425 http://hdl.handle.net/1721.1/59416 Donghyun Jin et al. “Quantum capacitance in scaled down III–V FETs.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. © Copyright 2010 IEEE en_US http://dx.doi.org/10.1109/IEDM.2009.5424312 2009 IEEE International Electron Devices Meeting (IEDM) Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Jin, Donghyun Kim, Dae-Hyun Kim, Tae-Woo del Alamo, Jesus A. Quantum capacitance in scaled down III-V FETs |
| title | Quantum capacitance in scaled down III-V FETs |
| title_full | Quantum capacitance in scaled down III-V FETs |
| title_fullStr | Quantum capacitance in scaled down III-V FETs |
| title_full_unstemmed | Quantum capacitance in scaled down III-V FETs |
| title_short | Quantum capacitance in scaled down III-V FETs |
| title_sort | quantum capacitance in scaled down iii v fets |
| url | http://hdl.handle.net/1721.1/59416 |
| work_keys_str_mv | AT jindonghyun quantumcapacitanceinscaleddowniiivfets AT kimdaehyun quantumcapacitanceinscaleddowniiivfets AT kimtaewoo quantumcapacitanceinscaleddowniiivfets AT delalamojesusa quantumcapacitanceinscaleddowniiivfets |