Fabrication and Characterization of Through-Substrate Interconnects

We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for a...

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Main Authors: del Alamo, Jesus A., Wu, Joyce H.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
Online Access:http://hdl.handle.net/1721.1/59587
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author del Alamo, Jesus A.
Wu, Joyce H.
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
del Alamo, Jesus A.
Wu, Joyce H.
author_sort del Alamo, Jesus A.
collection MIT
description We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF.
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spelling mit-1721.1/595872022-10-01T03:43:57Z Fabrication and Characterization of Through-Substrate Interconnects del Alamo, Jesus A. Wu, Joyce H. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science del Alamo, Jesus A. del Alamo, Jesus A. Wu, Joyce H. Ground inductance Si RF technology substrate crosstalk substrate via through-substrate via through-wafer interconnect through-wafer via via inductance We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF. Applied Materials Graduate Fellowship 2010-10-29T15:54:12Z 2010-10-29T15:54:12Z 2010-05 2010-06 Article http://purl.org/eprint/type/JournalArticle 0018-9383 INSPEC Accession Number: 11340896 http://hdl.handle.net/1721.1/59587 Wu, J.H., and J.A. del Alamo. “Fabrication and Characterization of Through-Substrate Interconnects.” Electron Devices, IEEE Transactions on 57.6 (2010): 1261-1268. © 2010 Institute of Electrical and Electronics Engineers. en_US http://dx.doi.org/10.1109/ted.2010.2045671 IEEE Transactions on Electron Devices Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE
spellingShingle Ground inductance
Si RF technology
substrate crosstalk
substrate via
through-substrate via
through-wafer interconnect
through-wafer via
via inductance
del Alamo, Jesus A.
Wu, Joyce H.
Fabrication and Characterization of Through-Substrate Interconnects
title Fabrication and Characterization of Through-Substrate Interconnects
title_full Fabrication and Characterization of Through-Substrate Interconnects
title_fullStr Fabrication and Characterization of Through-Substrate Interconnects
title_full_unstemmed Fabrication and Characterization of Through-Substrate Interconnects
title_short Fabrication and Characterization of Through-Substrate Interconnects
title_sort fabrication and characterization of through substrate interconnects
topic Ground inductance
Si RF technology
substrate crosstalk
substrate via
through-substrate via
through-wafer interconnect
through-wafer via
via inductance
url http://hdl.handle.net/1721.1/59587
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