Fabrication and Characterization of Through-Substrate Interconnects
We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for a...
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Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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Online Access: | http://hdl.handle.net/1721.1/59587 |
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author | del Alamo, Jesus A. Wu, Joyce H. |
author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science del Alamo, Jesus A. Wu, Joyce H. |
author_sort | del Alamo, Jesus A. |
collection | MIT |
description | We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF. |
first_indexed | 2024-09-23T11:27:20Z |
format | Article |
id | mit-1721.1/59587 |
institution | Massachusetts Institute of Technology |
language | en_US |
last_indexed | 2024-09-23T11:27:20Z |
publishDate | 2010 |
publisher | Institute of Electrical and Electronics Engineers |
record_format | dspace |
spelling | mit-1721.1/595872022-10-01T03:43:57Z Fabrication and Characterization of Through-Substrate Interconnects del Alamo, Jesus A. Wu, Joyce H. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science del Alamo, Jesus A. del Alamo, Jesus A. Wu, Joyce H. Ground inductance Si RF technology substrate crosstalk substrate via through-substrate via through-wafer interconnect through-wafer via via inductance We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF. Applied Materials Graduate Fellowship 2010-10-29T15:54:12Z 2010-10-29T15:54:12Z 2010-05 2010-06 Article http://purl.org/eprint/type/JournalArticle 0018-9383 INSPEC Accession Number: 11340896 http://hdl.handle.net/1721.1/59587 Wu, J.H., and J.A. del Alamo. “Fabrication and Characterization of Through-Substrate Interconnects.” Electron Devices, IEEE Transactions on 57.6 (2010): 1261-1268. © 2010 Institute of Electrical and Electronics Engineers. en_US http://dx.doi.org/10.1109/ted.2010.2045671 IEEE Transactions on Electron Devices Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
spellingShingle | Ground inductance Si RF technology substrate crosstalk substrate via through-substrate via through-wafer interconnect through-wafer via via inductance del Alamo, Jesus A. Wu, Joyce H. Fabrication and Characterization of Through-Substrate Interconnects |
title | Fabrication and Characterization of Through-Substrate Interconnects |
title_full | Fabrication and Characterization of Through-Substrate Interconnects |
title_fullStr | Fabrication and Characterization of Through-Substrate Interconnects |
title_full_unstemmed | Fabrication and Characterization of Through-Substrate Interconnects |
title_short | Fabrication and Characterization of Through-Substrate Interconnects |
title_sort | fabrication and characterization of through substrate interconnects |
topic | Ground inductance Si RF technology substrate crosstalk substrate via through-substrate via through-wafer interconnect through-wafer via via inductance |
url | http://hdl.handle.net/1721.1/59587 |
work_keys_str_mv | AT delalamojesusa fabricationandcharacterizationofthroughsubstrateinterconnects AT wujoyceh fabricationandcharacterizationofthroughsubstrateinterconnects |