Fabrication and Characterization of Through-Substrate Interconnects

Fabrication and Characterization of Through-Substrate Interconnects

We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for a...

Full description

Bibliographic Details
Main Authors: del Alamo, Jesus A., Wu, Joyce H.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
Ground inductance
Si RF technology
substrate crosstalk
substrate via
through-substrate via
through-wafer interconnect
through-wafer via
via inductance
Online Access:http://hdl.handle.net/1721.1/59587

Internet

http://hdl.handle.net/1721.1/59587

Similar Items