Optical gain from the direct gap transition of Ge-on-Si at room temperature
We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/1721.1/59838 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1826212780895633408 |
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| author | Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen |
| author_sort | Liu, Jifeng |
| collection | MIT |
| description | We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si. |
| first_indexed | 2024-09-23T15:37:49Z |
| format | Article |
| id | mit-1721.1/59838 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:37:49Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | mit-1721.1/598382022-09-29T15:07:20Z Optical gain from the direct gap transition of Ge-on-Si at room temperature Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Kimerling, Lionel C. Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si. Multidisciplinary University Research Initiative (MURI)(Si-based Laser Initiative) United States. Air Force Office of Scientific Research 2010-11-05T18:55:48Z 2010-11-05T18:55:48Z 2009-09 2009-09 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-4402-1 1949-2081 INSPEC Accession Number: 10978636 http://hdl.handle.net/1721.1/59838 Jifeng Liu et al. “Optical gain from the direct gap transition of Ge-on-Si at room temperature.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 262-264. © Copyright 2010 IEEE https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1109/GROUP4.2009.5338364 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf IEEE |
| spellingShingle | Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen Optical gain from the direct gap transition of Ge-on-Si at room temperature |
| title | Optical gain from the direct gap transition of Ge-on-Si at room temperature |
| title_full | Optical gain from the direct gap transition of Ge-on-Si at room temperature |
| title_fullStr | Optical gain from the direct gap transition of Ge-on-Si at room temperature |
| title_full_unstemmed | Optical gain from the direct gap transition of Ge-on-Si at room temperature |
| title_short | Optical gain from the direct gap transition of Ge-on-Si at room temperature |
| title_sort | optical gain from the direct gap transition of ge on si at room temperature |
| url | http://hdl.handle.net/1721.1/59838 https://orcid.org/0000-0002-3913-6189 |
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