Optical gain from the direct gap transition of Ge-on-Si at room temperature
We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://hdl.handle.net/1721.1/59838 https://orcid.org/0000-0002-3913-6189 |