RF power potential of 45 nm CMOS technology
This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with a peak power-added efficiency (PAE) of 70% at 1.1 V. The PAE and P[subscript o...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59846 |
| _version_ | 1811068272862298112 |
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| author | Gogineni, Usha del Alamo, Jesus A. Putnam, Christopher |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gogineni, Usha del Alamo, Jesus A. Putnam, Christopher |
| author_sort | Gogineni, Usha |
| collection | MIT |
| description | This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with a peak power-added efficiency (PAE) of 70% at 1.1 V. The PAE and P[subscript out] decrease with increasing device width because of a decrease in the maximum oscillation frequency (f[subscript max]) for large width devices. The PAE also decreases with increasing frequency because of a decrease in gain as the operating frequency approaches f[subscript max]. The RF power performance of 45 nm devices is shown to be very similar to that of 65 nm devices. |
| first_indexed | 2024-09-23T07:53:52Z |
| format | Article |
| id | mit-1721.1/59846 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T07:53:52Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/598462022-09-30T00:51:00Z RF power potential of 45 nm CMOS technology Gogineni, Usha del Alamo, Jesus A. Putnam, Christopher Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science del Alamo, Jesus A. Gogineni, Usha del Alamo, Jesus A. This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with a peak power-added efficiency (PAE) of 70% at 1.1 V. The PAE and P[subscript out] decrease with increasing device width because of a decrease in the maximum oscillation frequency (f[subscript max]) for large width devices. The PAE also decreases with increasing frequency because of a decrease in gain as the operating frequency approaches f[subscript max]. The RF power performance of 45 nm devices is shown to be very similar to that of 65 nm devices. 2010-11-05T20:05:00Z 2010-11-05T20:05:00Z 2010-03 2010-01 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-5456-3 INSPEC Accession Number: 11155408 http://hdl.handle.net/1721.1/59846 Gogineni, U., J.A. del Alamo, and C. Putnam. “RF power potential of 45 nm CMOS technology.” Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on. 2010. 204-207. © 2010 Institute of Electrical and Electronics Engineers. en_US http://dx.doi.org/10.1109/SMIC.2010.5422960 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Gogineni, Usha del Alamo, Jesus A. Putnam, Christopher RF power potential of 45 nm CMOS technology |
| title | RF power potential of 45 nm CMOS technology |
| title_full | RF power potential of 45 nm CMOS technology |
| title_fullStr | RF power potential of 45 nm CMOS technology |
| title_full_unstemmed | RF power potential of 45 nm CMOS technology |
| title_short | RF power potential of 45 nm CMOS technology |
| title_sort | rf power potential of 45 nm cmos technology |
| url | http://hdl.handle.net/1721.1/59846 |
| work_keys_str_mv | AT gogineniusha rfpowerpotentialof45nmcmostechnology AT delalamojesusa rfpowerpotentialof45nmcmostechnology AT putnamchristopher rfpowerpotentialof45nmcmostechnology |